New functional AlGaAs/InGaAs/GaAs heterostructure-emitter and heterostructure-base transistor (HEHBT)

Wen-Chau Liu, Jung Hui Tsai, Lih Wen Laih, H. R. Chen, Shiou Ying Cheng, Wei Chou Wang, Po Hung Lin, Jing Yuh Chen

Research output: Contribution to conferencePaperpeer-review

Abstract

A new functional AlGaAs/InGaAs/GaAs heterostructure-emitter and heterostructure-base transistor (HEHBT) with pseudomorphic base structure is presented. Due to the insertion of InGaAs quantum well between emitter-base (E-B) junction, the valence band discontinuity can be enhanced and a high emitter injection efficiency may be achieved. In addition, an interesting S-shaped multiple negative differential resistance (MNDR) phenomenon is observed under the inverted operation mode. This may be attributed to an avalanche multiplication and sequential two-stage barrier lowering effect resulting from electrons accumulation at AlGaAs/GaAs heterointerface and InGaAs quantum well, respectively.

Original languageEnglish
Pages247-250
Number of pages4
Publication statusPublished - 1996 Dec 1
EventProceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD - Canberra, Aust
Duration: 1996 Dec 81996 Dec 11

Other

OtherProceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD
CityCanberra, Aust
Period96-12-0896-12-11

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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