New functional AlGaAs/InGaAs/GaAs heterostructure-emitter and heterostructure-base transistor (HEHBT)

Wen Chau Liu; Jung Hui Tsai; Lih Wen Laih; H. R. Chen; Shiou Ying Cheng; Wei Chou Wang; Po Hung Lin; Jing Yuh Chen

New functional AlGaAs/InGaAs/GaAs heterostructure-emitter and heterostructure-base transistor (HEHBT)

Wen Chau Liu, Jung Hui Tsai, Lih Wen Laih, H. R. Chen, Shiou Ying Cheng, Wei Chou Wang, Po Hung Lin, Jing Yuh Chen

Institute of Microelectronics

Research output: Contribution to conference › Paper › peer-review

Abstract

A new functional AlGaAs/InGaAs/GaAs heterostructure-emitter and heterostructure-base transistor (HEHBT) with pseudomorphic base structure is presented. Due to the insertion of InGaAs quantum well between emitter-base (E-B) junction, the valence band discontinuity can be enhanced and a high emitter injection efficiency may be achieved. In addition, an interesting S-shaped multiple negative differential resistance (MNDR) phenomenon is observed under the inverted operation mode. This may be attributed to an avalanche multiplication and sequential two-stage barrier lowering effect resulting from electrons accumulation at AlGaAs/GaAs heterointerface and InGaAs quantum well, respectively.

Original language	English
Pages	247-250
Number of pages	4
Publication status	Published - 1996
Event	Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD - Canberra, Aust Duration: 1996 Dec 8 → 1996 Dec 11

Other

Other	Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD
City	Canberra, Aust
Period	96-12-08 → 96-12-11

All Science Journal Classification (ASJC) codes

General Engineering

Cite this

@conference{e23a49e8b750478ebb2cda51fa9abdde,

title = "New functional AlGaAs/InGaAs/GaAs heterostructure-emitter and heterostructure-base transistor (HEHBT)",

abstract = "A new functional AlGaAs/InGaAs/GaAs heterostructure-emitter and heterostructure-base transistor (HEHBT) with pseudomorphic base structure is presented. Due to the insertion of InGaAs quantum well between emitter-base (E-B) junction, the valence band discontinuity can be enhanced and a high emitter injection efficiency may be achieved. In addition, an interesting S-shaped multiple negative differential resistance (MNDR) phenomenon is observed under the inverted operation mode. This may be attributed to an avalanche multiplication and sequential two-stage barrier lowering effect resulting from electrons accumulation at AlGaAs/GaAs heterointerface and InGaAs quantum well, respectively.",

author = "Liu, {Wen Chau} and Tsai, {Jung Hui} and Laih, {Lih Wen} and Chen, {H. R.} and Cheng, {Shiou Ying} and Wang, {Wei Chou} and Lin, {Po Hung} and Chen, {Jing Yuh}",

year = "1996",

language = "English",

pages = "247--250",

note = "Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD ; Conference date: 08-12-1996 Through 11-12-1996",

}

New functional AlGaAs/InGaAs/GaAs heterostructure-emitter and heterostructure-base transistor (HEHBT). / Liu, Wen Chau; Tsai, Jung Hui; Laih, Lih Wen et al.
1996. 247-250 Paper presented at Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD, Canberra, Aust.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - New functional AlGaAs/InGaAs/GaAs heterostructure-emitter and heterostructure-base transistor (HEHBT)

AU - Liu, Wen Chau

AU - Tsai, Jung Hui

AU - Laih, Lih Wen

AU - Chen, H. R.

AU - Cheng, Shiou Ying

AU - Wang, Wei Chou

AU - Lin, Po Hung

AU - Chen, Jing Yuh

PY - 1996

Y1 - 1996

N2 - A new functional AlGaAs/InGaAs/GaAs heterostructure-emitter and heterostructure-base transistor (HEHBT) with pseudomorphic base structure is presented. Due to the insertion of InGaAs quantum well between emitter-base (E-B) junction, the valence band discontinuity can be enhanced and a high emitter injection efficiency may be achieved. In addition, an interesting S-shaped multiple negative differential resistance (MNDR) phenomenon is observed under the inverted operation mode. This may be attributed to an avalanche multiplication and sequential two-stage barrier lowering effect resulting from electrons accumulation at AlGaAs/GaAs heterointerface and InGaAs quantum well, respectively.

AB - A new functional AlGaAs/InGaAs/GaAs heterostructure-emitter and heterostructure-base transistor (HEHBT) with pseudomorphic base structure is presented. Due to the insertion of InGaAs quantum well between emitter-base (E-B) junction, the valence band discontinuity can be enhanced and a high emitter injection efficiency may be achieved. In addition, an interesting S-shaped multiple negative differential resistance (MNDR) phenomenon is observed under the inverted operation mode. This may be attributed to an avalanche multiplication and sequential two-stage barrier lowering effect resulting from electrons accumulation at AlGaAs/GaAs heterointerface and InGaAs quantum well, respectively.

UR - http://www.scopus.com/inward/record.url?scp=0030356357&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030356357&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0030356357

SP - 247

EP - 250

T2 - Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD

Y2 - 8 December 1996 through 11 December 1996

ER -

New functional AlGaAs/InGaAs/GaAs heterostructure-emitter and heterostructure-base transistor (HEHBT)

Abstract

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