NEW GaAs BIPOLAR-UNIPOLAR TRANSITION NEGATIVE DIFFERENTIAL RESISTANCE DEVICE (BUNDR).

K. F. Yarn, Yeong-Her Wang, C. Y. Chang, M. S. Jame

Research output: Contribution to journalConference article

7 Citations (Scopus)

Abstract

A three-terminal GaAs negative differential resistance device prepared by molecular-beam epitaxy is described. The negative differential resistance characteristic is due to the bipolar-unipolar transition effect. The device is an n-shaped and voltage-controlled utilizing a n** plus -i- delta p** plus thin base. The peak-to-valley current ratios are modulated by a third external applied voltage. A large peak-to-valley current ratio of 98 was obtained for a base-to-emitter forward bias of 5 V at room temperature, at an applied emitter-collector bias of 5. 7 V.

Original languageEnglish
Pages (from-to)74-77
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 1987 Dec 1

Fingerprint

valleys
emitters
Electric potential
electric potential
Molecular beam epitaxy
accumulators
molecular beam epitaxy
room temperature
Temperature
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

@article{05c9506cf3b44047888359eadd0df008,
title = "NEW GaAs BIPOLAR-UNIPOLAR TRANSITION NEGATIVE DIFFERENTIAL RESISTANCE DEVICE (BUNDR).",
abstract = "A three-terminal GaAs negative differential resistance device prepared by molecular-beam epitaxy is described. The negative differential resistance characteristic is due to the bipolar-unipolar transition effect. The device is an n-shaped and voltage-controlled utilizing a n** plus -i- delta p** plus thin base. The peak-to-valley current ratios are modulated by a third external applied voltage. A large peak-to-valley current ratio of 98 was obtained for a base-to-emitter forward bias of 5 V at room temperature, at an applied emitter-collector bias of 5. 7 V.",
author = "Yarn, {K. F.} and Yeong-Her Wang and Chang, {C. Y.} and Jame, {M. S.}",
year = "1987",
month = "12",
day = "1",
language = "English",
pages = "74--77",
journal = "Technical Digest - International Electron Devices Meeting",
issn = "0163-1918",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

NEW GaAs BIPOLAR-UNIPOLAR TRANSITION NEGATIVE DIFFERENTIAL RESISTANCE DEVICE (BUNDR). / Yarn, K. F.; Wang, Yeong-Her; Chang, C. Y.; Jame, M. S.

In: Technical Digest - International Electron Devices Meeting, 01.12.1987, p. 74-77.

Research output: Contribution to journalConference article

TY - JOUR

T1 - NEW GaAs BIPOLAR-UNIPOLAR TRANSITION NEGATIVE DIFFERENTIAL RESISTANCE DEVICE (BUNDR).

AU - Yarn, K. F.

AU - Wang, Yeong-Her

AU - Chang, C. Y.

AU - Jame, M. S.

PY - 1987/12/1

Y1 - 1987/12/1

N2 - A three-terminal GaAs negative differential resistance device prepared by molecular-beam epitaxy is described. The negative differential resistance characteristic is due to the bipolar-unipolar transition effect. The device is an n-shaped and voltage-controlled utilizing a n** plus -i- delta p** plus thin base. The peak-to-valley current ratios are modulated by a third external applied voltage. A large peak-to-valley current ratio of 98 was obtained for a base-to-emitter forward bias of 5 V at room temperature, at an applied emitter-collector bias of 5. 7 V.

AB - A three-terminal GaAs negative differential resistance device prepared by molecular-beam epitaxy is described. The negative differential resistance characteristic is due to the bipolar-unipolar transition effect. The device is an n-shaped and voltage-controlled utilizing a n** plus -i- delta p** plus thin base. The peak-to-valley current ratios are modulated by a third external applied voltage. A large peak-to-valley current ratio of 98 was obtained for a base-to-emitter forward bias of 5 V at room temperature, at an applied emitter-collector bias of 5. 7 V.

UR - http://www.scopus.com/inward/record.url?scp=0023542534&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0023542534&partnerID=8YFLogxK

M3 - Conference article

SP - 74

EP - 77

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

SN - 0163-1918

ER -