NEW GaAs BIPOLAR-UNIPOLAR TRANSITION NEGATIVE DIFFERENTIAL RESISTANCE DEVICE (BUNDR).

K. F. Yarn, Y. H. Wang, C. Y. Chang, M. S. Jame

Research output: Contribution to journalConference article

7 Citations (Scopus)

Abstract

A three-terminal GaAs negative differential resistance device prepared by molecular-beam epitaxy is described. The negative differential resistance characteristic is due to the bipolar-unipolar transition effect. The device is an n-shaped and voltage-controlled utilizing a n** plus -i- delta p** plus thin base. The peak-to-valley current ratios are modulated by a third external applied voltage. A large peak-to-valley current ratio of 98 was obtained for a base-to-emitter forward bias of 5 V at room temperature, at an applied emitter-collector bias of 5. 7 V.

Original languageEnglish
Pages (from-to)74-77
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 1987 Dec 1

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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