New GaAs n + -p-δ(n +) -i-δ(p +)-i-n + switching device grown by molecular beam epitaxy

Wen-Chau Liu, C. Y. Sun

Research output: Contribution to journalArticle

Abstract

A new GaAs switching device with an n+-p-δ(n+)-i-δ(p+)-i-n+ structure has been demonstrated. An interesting S-shaped negative differential resistance (NDR) is shown to occur that originates from the avalanche multiplications within the δ(n+)-i-δ(p+)-i sawtooth doped superlattice (SDS). The excellent NDR behaviour gives the studied structure good potential for switching device applications. Furthermore, with an adequate design, the studied structure can be applied to fabricate a new functional device.

Original languageEnglish
Pages (from-to)1704-1706
Number of pages3
JournalElectronics Letters
Volume27
Issue number19
DOIs
Publication statusPublished - 1991 Aug 29

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Molecular beam epitaxy

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

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New GaAs n + -p-δ(n +) -i-δ(p +)-i-n + switching device grown by molecular beam epitaxy. / Liu, Wen-Chau; Sun, C. Y.

In: Electronics Letters, Vol. 27, No. 19, 29.08.1991, p. 1704-1706.

Research output: Contribution to journalArticle

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