New GaInP/GaAs high-barrier gate and tri-step doped channel transistor

Wen-Chau Liu, W. L. Chang, Y. H. Shie, H. J. Pan, W. C. Wang, J. Y. Chen, K. B. Thei, K. H. Yu, S. C. Feng

Research output: Contribution to journalConference article

Abstract

A high-barrier gate GaInP/GaAs doped channel field-effect transistor (DCFET) has been fabricated and studied. The δ(P + )-GaInP layer is employed to offer a high conduction band offset for a good electron confinement and achieve a high valance band offset as a hole barrier. The active channel is triple-step doped to obtain high-barrier camel gate. A fabricated n + -GaAs/δ(P + )-GaInP/n-GaAs camel diode exhibits a barrier height larger than 1.2 eV and a very high breakdown voltage of 33 V. The measured transconductance is 140 mS/mm with a unity current gain frequency of 17 GHz for a 1×50 μm 2 device.

Original languageEnglish
Pages (from-to)479-482
Number of pages4
JournalConference Proceedings - International Conference on Indium Phosphide and Related Materials
Publication statusPublished - 1999 Jan 1
EventProceedings of the 1999 11th International Conference on Indium Phosphide and Related Materials (IPRM) - Davos, Switz
Duration: 1999 May 161999 May 20

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Gates (transistor)
Transconductance
Field effect transistors
Conduction bands
Electric breakdown
Transistors
Diodes
Electrons
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Liu, Wen-Chau ; Chang, W. L. ; Shie, Y. H. ; Pan, H. J. ; Wang, W. C. ; Chen, J. Y. ; Thei, K. B. ; Yu, K. H. ; Feng, S. C. / New GaInP/GaAs high-barrier gate and tri-step doped channel transistor. In: Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 1999 ; pp. 479-482.
@article{5a0c15eb8ce54f0b83c8fe45d670158b,
title = "New GaInP/GaAs high-barrier gate and tri-step doped channel transistor",
abstract = "A high-barrier gate GaInP/GaAs doped channel field-effect transistor (DCFET) has been fabricated and studied. The δ(P + )-GaInP layer is employed to offer a high conduction band offset for a good electron confinement and achieve a high valance band offset as a hole barrier. The active channel is triple-step doped to obtain high-barrier camel gate. A fabricated n + -GaAs/δ(P + )-GaInP/n-GaAs camel diode exhibits a barrier height larger than 1.2 eV and a very high breakdown voltage of 33 V. The measured transconductance is 140 mS/mm with a unity current gain frequency of 17 GHz for a 1×50 μm 2 device.",
author = "Wen-Chau Liu and Chang, {W. L.} and Shie, {Y. H.} and Pan, {H. J.} and Wang, {W. C.} and Chen, {J. Y.} and Thei, {K. B.} and Yu, {K. H.} and Feng, {S. C.}",
year = "1999",
month = "1",
day = "1",
language = "English",
pages = "479--482",
journal = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",
issn = "1092-8669",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

New GaInP/GaAs high-barrier gate and tri-step doped channel transistor. / Liu, Wen-Chau; Chang, W. L.; Shie, Y. H.; Pan, H. J.; Wang, W. C.; Chen, J. Y.; Thei, K. B.; Yu, K. H.; Feng, S. C.

In: Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 01.01.1999, p. 479-482.

Research output: Contribution to journalConference article

TY - JOUR

T1 - New GaInP/GaAs high-barrier gate and tri-step doped channel transistor

AU - Liu, Wen-Chau

AU - Chang, W. L.

AU - Shie, Y. H.

AU - Pan, H. J.

AU - Wang, W. C.

AU - Chen, J. Y.

AU - Thei, K. B.

AU - Yu, K. H.

AU - Feng, S. C.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - A high-barrier gate GaInP/GaAs doped channel field-effect transistor (DCFET) has been fabricated and studied. The δ(P + )-GaInP layer is employed to offer a high conduction band offset for a good electron confinement and achieve a high valance band offset as a hole barrier. The active channel is triple-step doped to obtain high-barrier camel gate. A fabricated n + -GaAs/δ(P + )-GaInP/n-GaAs camel diode exhibits a barrier height larger than 1.2 eV and a very high breakdown voltage of 33 V. The measured transconductance is 140 mS/mm with a unity current gain frequency of 17 GHz for a 1×50 μm 2 device.

AB - A high-barrier gate GaInP/GaAs doped channel field-effect transistor (DCFET) has been fabricated and studied. The δ(P + )-GaInP layer is employed to offer a high conduction band offset for a good electron confinement and achieve a high valance band offset as a hole barrier. The active channel is triple-step doped to obtain high-barrier camel gate. A fabricated n + -GaAs/δ(P + )-GaInP/n-GaAs camel diode exhibits a barrier height larger than 1.2 eV and a very high breakdown voltage of 33 V. The measured transconductance is 140 mS/mm with a unity current gain frequency of 17 GHz for a 1×50 μm 2 device.

UR - http://www.scopus.com/inward/record.url?scp=0032670445&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032670445&partnerID=8YFLogxK

M3 - Conference article

SP - 479

EP - 482

JO - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

JF - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

SN - 1092-8669

ER -