New GaInP/GaAs high-barrier gate and tri-step doped channel transistor

W. C. Liu; W. L. Chang; Y. H. Shie; H. J. Pan; W. C. Wang; J. Y. Chen; K. B. Thei; K. H. Yu; S. C. Feng

New GaInP/GaAs high-barrier gate and tri-step doped channel transistor

W. C. Liu, W. L. Chang, Y. H. Shie, H. J. Pan, W. C. Wang, J. Y. Chen, K. B. Thei, K. H. Yu, S. C. Feng

Institute of Microelectronics

Research output: Contribution to journal › Conference article › peer-review

Abstract

A high-barrier gate GaInP/GaAs doped channel field-effect transistor (DCFET) has been fabricated and studied. The δ(P⁺)-GaInP layer is employed to offer a high conduction band offset for a good electron confinement and achieve a high valance band offset as a hole barrier. The active channel is triple-step doped to obtain high-barrier camel gate. A fabricated n⁺-GaAs/δ(P⁺)-GaInP/n-GaAs camel diode exhibits a barrier height larger than 1.2 eV and a very high breakdown voltage of 33 V. The measured transconductance is 140 mS/mm with a unity current gain frequency of 17 GHz for a 1×50 μm² device.

Original language	English
Pages (from-to)	479-482
Number of pages	4
Journal	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
Publication status	Published - 1999
Event	Proceedings of the 1999 11th International Conference on Indium Phosphide and Related Materials (IPRM) - Davos, Switz Duration: 1999 May 16 → 1999 May 20

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

@article{5a0c15eb8ce54f0b83c8fe45d670158b,

title = "New GaInP/GaAs high-barrier gate and tri-step doped channel transistor",

abstract = "A high-barrier gate GaInP/GaAs doped channel field-effect transistor (DCFET) has been fabricated and studied. The δ(P+)-GaInP layer is employed to offer a high conduction band offset for a good electron confinement and achieve a high valance band offset as a hole barrier. The active channel is triple-step doped to obtain high-barrier camel gate. A fabricated n+-GaAs/δ(P+)-GaInP/n-GaAs camel diode exhibits a barrier height larger than 1.2 eV and a very high breakdown voltage of 33 V. The measured transconductance is 140 mS/mm with a unity current gain frequency of 17 GHz for a 1×50 μm2 device.",

author = "Liu, {W. C.} and Chang, {W. L.} and Shie, {Y. H.} and Pan, {H. J.} and Wang, {W. C.} and Chen, {J. Y.} and Thei, {K. B.} and Yu, {K. H.} and Feng, {S. C.}",

note = "Copyright: Copyright 2004 Elsevier Science B.V., Amsterdam. All rights reserved.; Proceedings of the 1999 11th International Conference on Indium Phosphide and Related Materials (IPRM) ; Conference date: 16-05-1999 Through 20-05-1999",

year = "1999",

language = "English",

pages = "479--482",

journal = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

issn = "1092-8669",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - New GaInP/GaAs high-barrier gate and tri-step doped channel transistor

AU - Liu, W. C.

AU - Chang, W. L.

AU - Shie, Y. H.

AU - Pan, H. J.

AU - Wang, W. C.

AU - Chen, J. Y.

AU - Thei, K. B.

AU - Yu, K. H.

AU - Feng, S. C.

PY - 1999

Y1 - 1999

N2 - A high-barrier gate GaInP/GaAs doped channel field-effect transistor (DCFET) has been fabricated and studied. The δ(P+)-GaInP layer is employed to offer a high conduction band offset for a good electron confinement and achieve a high valance band offset as a hole barrier. The active channel is triple-step doped to obtain high-barrier camel gate. A fabricated n+-GaAs/δ(P+)-GaInP/n-GaAs camel diode exhibits a barrier height larger than 1.2 eV and a very high breakdown voltage of 33 V. The measured transconductance is 140 mS/mm with a unity current gain frequency of 17 GHz for a 1×50 μm2 device.

AB - A high-barrier gate GaInP/GaAs doped channel field-effect transistor (DCFET) has been fabricated and studied. The δ(P+)-GaInP layer is employed to offer a high conduction band offset for a good electron confinement and achieve a high valance band offset as a hole barrier. The active channel is triple-step doped to obtain high-barrier camel gate. A fabricated n+-GaAs/δ(P+)-GaInP/n-GaAs camel diode exhibits a barrier height larger than 1.2 eV and a very high breakdown voltage of 33 V. The measured transconductance is 140 mS/mm with a unity current gain frequency of 17 GHz for a 1×50 μm2 device.

UR - http://www.scopus.com/inward/record.url?scp=0032670445&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032670445&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0032670445

SN - 1092-8669

SP - 479

EP - 482

JO - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

JF - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

T2 - Proceedings of the 1999 11th International Conference on Indium Phosphide and Related Materials (IPRM)

Y2 - 16 May 1999 through 20 May 1999

ER -

New GaInP/GaAs high-barrier gate and tri-step doped channel transistor

Abstract

All Science Journal Classification (ASJC) codes

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