NEW HIGH SPEED DEVICE: THE TEG-BASE TRANSISTOR.

C. Y. Chang; W. C. Liu; M. S. Jame; Y. H. Wang

doi:10.7567/ssdm.1986.c-5-3

NEW HIGH SPEED DEVICE: THE TEG-BASE TRANSISTOR.

C. Y. Chang, W. C. Liu, M. S. Jame, Y. H. Wang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We present a new high speed transistor, the V-grooved TEG-base transistor (TEG BT) which is a majority carrier (hot) transport device with a modulation of the barrier directly by the V//E//B bias. By using a two dimensional electron gas as the base, the structure is n** plus GaAs/graded i-AlGaAs/i-GaAs (TEG base) /i-AlGaAs/n** plus GaAs, which has revealed high gain ( alpha approximately equals 0. 96) and ultra high speed (approximately 1ps).

Original language	English
Title of host publication	Conference on Solid State Devices and Materials
Publisher	Business Cent for Academic Soc Japan
Pages	355-357
Number of pages	3
ISBN (Print)	493081314X, 9784930813145
DOIs	https://doi.org/10.7567/ssdm.1986.c-5-3
Publication status	Published - 1986

Publication series

Name	Conference on Solid State Devices and Materials

All Science Journal Classification (ASJC) codes

Engineering(all)

Access to Document

10.7567/ssdm.1986.c-5-3

Fingerprint Dive into the research topics of 'NEW HIGH SPEED DEVICE: THE TEG-BASE TRANSISTOR.'. Together they form a unique fingerprint.

Cite this

@inproceedings{89192439d2094e4c832797daa9b5b2d5,

title = "NEW HIGH SPEED DEVICE: THE TEG-BASE TRANSISTOR.",

abstract = "We present a new high speed transistor, the V-grooved TEG-base transistor (TEG BT) which is a majority carrier (hot) transport device with a modulation of the barrier directly by the V//E//B bias. By using a two dimensional electron gas as the base, the structure is n** plus GaAs/graded i-AlGaAs/i-GaAs (TEG base) /i-AlGaAs/n** plus GaAs, which has revealed high gain ( alpha approximately equals 0. 96) and ultra high speed (approximately 1ps).",

author = "Chang, {C. Y.} and Liu, {W. C.} and Jame, {M. S.} and Wang, {Y. H.}",

year = "1986",

doi = "10.7567/ssdm.1986.c-5-3",

language = "English",

isbn = "493081314X",

series = "Conference on Solid State Devices and Materials",

publisher = "Business Cent for Academic Soc Japan",

pages = "355--357",

booktitle = "Conference on Solid State Devices and Materials",

}

TY - GEN

T1 - NEW HIGH SPEED DEVICE

T2 - THE TEG-BASE TRANSISTOR.

AU - Chang, C. Y.

AU - Liu, W. C.

AU - Jame, M. S.

AU - Wang, Y. H.

PY - 1986

Y1 - 1986

N2 - We present a new high speed transistor, the V-grooved TEG-base transistor (TEG BT) which is a majority carrier (hot) transport device with a modulation of the barrier directly by the V//E//B bias. By using a two dimensional electron gas as the base, the structure is n** plus GaAs/graded i-AlGaAs/i-GaAs (TEG base) /i-AlGaAs/n** plus GaAs, which has revealed high gain ( alpha approximately equals 0. 96) and ultra high speed (approximately 1ps).

AB - We present a new high speed transistor, the V-grooved TEG-base transistor (TEG BT) which is a majority carrier (hot) transport device with a modulation of the barrier directly by the V//E//B bias. By using a two dimensional electron gas as the base, the structure is n** plus GaAs/graded i-AlGaAs/i-GaAs (TEG base) /i-AlGaAs/n** plus GaAs, which has revealed high gain ( alpha approximately equals 0. 96) and ultra high speed (approximately 1ps).

UR - http://www.scopus.com/inward/record.url?scp=0022881002&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0022881002&partnerID=8YFLogxK

U2 - 10.7567/ssdm.1986.c-5-3

DO - 10.7567/ssdm.1986.c-5-3

M3 - Conference contribution

AN - SCOPUS:0022881002

SN - 493081314X

SN - 9784930813145

T3 - Conference on Solid State Devices and Materials

SP - 355

EP - 357

BT - Conference on Solid State Devices and Materials

PB - Business Cent for Academic Soc Japan

ER -