TY - GEN
T1 - NEW HIGH SPEED DEVICE
T2 - THE TEG-BASE TRANSISTOR.
AU - Chang, C. Y.
AU - Liu, W. C.
AU - Jame, M. S.
AU - Wang, Y. H.
N1 - Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 1986
Y1 - 1986
N2 - We present a new high speed transistor, the V-grooved TEG-base transistor (TEG BT) which is a majority carrier (hot) transport device with a modulation of the barrier directly by the V//E//B bias. By using a two dimensional electron gas as the base, the structure is n** plus GaAs/graded i-AlGaAs/i-GaAs (TEG base) /i-AlGaAs/n** plus GaAs, which has revealed high gain ( alpha approximately equals 0. 96) and ultra high speed (approximately 1ps).
AB - We present a new high speed transistor, the V-grooved TEG-base transistor (TEG BT) which is a majority carrier (hot) transport device with a modulation of the barrier directly by the V//E//B bias. By using a two dimensional electron gas as the base, the structure is n** plus GaAs/graded i-AlGaAs/i-GaAs (TEG base) /i-AlGaAs/n** plus GaAs, which has revealed high gain ( alpha approximately equals 0. 96) and ultra high speed (approximately 1ps).
UR - https://www.scopus.com/pages/publications/0022881002
UR - https://www.scopus.com/pages/publications/0022881002#tab=citedBy
U2 - 10.7567/ssdm.1986.c-5-3
DO - 10.7567/ssdm.1986.c-5-3
M3 - Conference contribution
AN - SCOPUS:0022881002
SN - 493081314X
SN - 9784930813145
T3 - Conference on Solid State Devices and Materials
SP - 355
EP - 357
BT - Conference on Solid State Devices and Materials
PB - Business Cent for Academic Soc Japan
ER -