Abstract
An In 0.5 Ga 0.5 P/GaAs double heterojunction bipolar transistor (DHBT) with a δ-doped wide-gap collector structure has been fabricated and studied. Experimental results show that this device exhibits the advantages of a small offset voltage of 50 mV, a small saturation voltage of 1 V, and a large breakdown voltage of 20 V with a current gain of 20. These good characteristics are mainly due to the complete elimination of potential spike at emitter-base (E-B) and base-collector (B-C) heterojunction. Consequently, the studied device shows a good promise for high-speed, high-power, lower-power consumption and large input signal circuit applications.
| Original language | English |
|---|---|
| Pages | 243-245 |
| Number of pages | 3 |
| Publication status | Published - 1999 Jan 1 |
| Event | Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices - Perth, WA, Aust Duration: 1998 Dec 14 → 1998 Dec 16 |
Other
| Other | Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices |
|---|---|
| City | Perth, WA, Aust |
| Period | 98-12-14 → 98-12-16 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
Cite this
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New InGaP/GaAs double heterojunction bipolar transistor (DHBT) with a δ-doped wide-gap collector. / Liu, Wen-Chau; Wang, W. C.; Chang, W. L.; Yu, K. H.; Feng, S. C.; Yan, J. H.
1999. 243-245 Paper presented at Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices, Perth, WA, Aust, .Research output: Contribution to conference › Paper
TY - CONF
T1 - New InGaP/GaAs double heterojunction bipolar transistor (DHBT) with a δ-doped wide-gap collector
AU - Liu, Wen-Chau
AU - Wang, W. C.
AU - Chang, W. L.
AU - Yu, K. H.
AU - Feng, S. C.
AU - Yan, J. H.
PY - 1999/1/1
Y1 - 1999/1/1
N2 - An In 0.5 Ga 0.5 P/GaAs double heterojunction bipolar transistor (DHBT) with a δ-doped wide-gap collector structure has been fabricated and studied. Experimental results show that this device exhibits the advantages of a small offset voltage of 50 mV, a small saturation voltage of 1 V, and a large breakdown voltage of 20 V with a current gain of 20. These good characteristics are mainly due to the complete elimination of potential spike at emitter-base (E-B) and base-collector (B-C) heterojunction. Consequently, the studied device shows a good promise for high-speed, high-power, lower-power consumption and large input signal circuit applications.
AB - An In 0.5 Ga 0.5 P/GaAs double heterojunction bipolar transistor (DHBT) with a δ-doped wide-gap collector structure has been fabricated and studied. Experimental results show that this device exhibits the advantages of a small offset voltage of 50 mV, a small saturation voltage of 1 V, and a large breakdown voltage of 20 V with a current gain of 20. These good characteristics are mainly due to the complete elimination of potential spike at emitter-base (E-B) and base-collector (B-C) heterojunction. Consequently, the studied device shows a good promise for high-speed, high-power, lower-power consumption and large input signal circuit applications.
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M3 - Paper
SP - 243
EP - 245
ER -