New InGaP/GaAs double heterojunction bipolar transistor (DHBT) with a δ-doped wide-gap collector

Wen-Chau Liu; W. C. Wang; W. L. Chang; K. H. Yu; S. C. Feng; J. H. Yan

New InGaP/GaAs double heterojunction bipolar transistor (DHBT) with a δ-doped wide-gap collector

Wen-Chau Liu, W. C. Wang, W. L. Chang, K. H. Yu, S. C. Feng, J. H. Yan

Research output: Contribution to conference › Paper

Abstract

An In _0.5 Ga _0.5 P/GaAs double heterojunction bipolar transistor (DHBT) with a δ-doped wide-gap collector structure has been fabricated and studied. Experimental results show that this device exhibits the advantages of a small offset voltage of 50 mV, a small saturation voltage of 1 V, and a large breakdown voltage of 20 V with a current gain of 20. These good characteristics are mainly due to the complete elimination of potential spike at emitter-base (E-B) and base-collector (B-C) heterojunction. Consequently, the studied device shows a good promise for high-speed, high-power, lower-power consumption and large input signal circuit applications.

Original language	English
Pages	243-245
Number of pages	3
Publication status	Published - 1999 Jan 1
Event	Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices - Perth, WA, Aust Duration: 1998 Dec 14 → 1998 Dec 16

Other

Other	Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices
City	Perth, WA, Aust
Period	98-12-14 → 98-12-16

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials

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@conference{9bf00da717ac4abaac59f43758d5695c,

title = "New InGaP/GaAs double heterojunction bipolar transistor (DHBT) with a δ-doped wide-gap collector",

abstract = " An In 0.5 Ga 0.5 P/GaAs double heterojunction bipolar transistor (DHBT) with a δ-doped wide-gap collector structure has been fabricated and studied. Experimental results show that this device exhibits the advantages of a small offset voltage of 50 mV, a small saturation voltage of 1 V, and a large breakdown voltage of 20 V with a current gain of 20. These good characteristics are mainly due to the complete elimination of potential spike at emitter-base (E-B) and base-collector (B-C) heterojunction. Consequently, the studied device shows a good promise for high-speed, high-power, lower-power consumption and large input signal circuit applications. ",

author = "Wen-Chau Liu and Wang, {W. C.} and Chang, {W. L.} and Yu, {K. H.} and Feng, {S. C.} and Yan, {J. H.}",

year = "1999",

month = jan,

day = "1",

language = "English",

pages = "243--245",

note = "Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices ; Conference date: 14-12-1998 Through 16-12-1998",

}

New InGaP/GaAs double heterojunction bipolar transistor (DHBT) with a δ-doped wide-gap collector. / Liu, Wen-Chau; Wang, W. C.; Chang, W. L.; Yu, K. H.; Feng, S. C.; Yan, J. H.

1999. 243-245 Paper presented at Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices, Perth, WA, Aust, .

Research output: Contribution to conference › Paper

TY - CONF

T1 - New InGaP/GaAs double heterojunction bipolar transistor (DHBT) with a δ-doped wide-gap collector

AU - Liu, Wen-Chau

AU - Wang, W. C.

AU - Chang, W. L.

AU - Yu, K. H.

AU - Feng, S. C.

AU - Yan, J. H.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - An In 0.5 Ga 0.5 P/GaAs double heterojunction bipolar transistor (DHBT) with a δ-doped wide-gap collector structure has been fabricated and studied. Experimental results show that this device exhibits the advantages of a small offset voltage of 50 mV, a small saturation voltage of 1 V, and a large breakdown voltage of 20 V with a current gain of 20. These good characteristics are mainly due to the complete elimination of potential spike at emitter-base (E-B) and base-collector (B-C) heterojunction. Consequently, the studied device shows a good promise for high-speed, high-power, lower-power consumption and large input signal circuit applications.

AB - An In 0.5 Ga 0.5 P/GaAs double heterojunction bipolar transistor (DHBT) with a δ-doped wide-gap collector structure has been fabricated and studied. Experimental results show that this device exhibits the advantages of a small offset voltage of 50 mV, a small saturation voltage of 1 V, and a large breakdown voltage of 20 V with a current gain of 20. These good characteristics are mainly due to the complete elimination of potential spike at emitter-base (E-B) and base-collector (B-C) heterojunction. Consequently, the studied device shows a good promise for high-speed, high-power, lower-power consumption and large input signal circuit applications.

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T2 - Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices

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