New InGaP/GaAs double heterojunction bipolar transistor (DHBT) with a δ-doped wide-gap collector

Wen-Chau Liu, W. C. Wang, W. L. Chang, K. H. Yu, S. C. Feng, J. H. Yan

Research output: Contribution to conferencePaper

Abstract

An In 0.5 Ga 0.5 P/GaAs double heterojunction bipolar transistor (DHBT) with a δ-doped wide-gap collector structure has been fabricated and studied. Experimental results show that this device exhibits the advantages of a small offset voltage of 50 mV, a small saturation voltage of 1 V, and a large breakdown voltage of 20 V with a current gain of 20. These good characteristics are mainly due to the complete elimination of potential spike at emitter-base (E-B) and base-collector (B-C) heterojunction. Consequently, the studied device shows a good promise for high-speed, high-power, lower-power consumption and large input signal circuit applications.

Original languageEnglish
Pages243-245
Number of pages3
Publication statusPublished - 1999 Jan 1
EventProceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices - Perth, WA, Aust
Duration: 1998 Dec 141998 Dec 16

Other

OtherProceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices
CityPerth, WA, Aust
Period98-12-1498-12-16

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Heterojunction bipolar transistors
Electric potential
Electric breakdown
Heterojunctions
Electric power utilization
Networks (circuits)
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

Liu, W-C., Wang, W. C., Chang, W. L., Yu, K. H., Feng, S. C., & Yan, J. H. (1999). New InGaP/GaAs double heterojunction bipolar transistor (DHBT) with a δ-doped wide-gap collector. 243-245. Paper presented at Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices, Perth, WA, Aust, .
Liu, Wen-Chau ; Wang, W. C. ; Chang, W. L. ; Yu, K. H. ; Feng, S. C. ; Yan, J. H. / New InGaP/GaAs double heterojunction bipolar transistor (DHBT) with a δ-doped wide-gap collector. Paper presented at Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices, Perth, WA, Aust, .3 p.
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abstract = "An In 0.5 Ga 0.5 P/GaAs double heterojunction bipolar transistor (DHBT) with a δ-doped wide-gap collector structure has been fabricated and studied. Experimental results show that this device exhibits the advantages of a small offset voltage of 50 mV, a small saturation voltage of 1 V, and a large breakdown voltage of 20 V with a current gain of 20. These good characteristics are mainly due to the complete elimination of potential spike at emitter-base (E-B) and base-collector (B-C) heterojunction. Consequently, the studied device shows a good promise for high-speed, high-power, lower-power consumption and large input signal circuit applications.",
author = "Wen-Chau Liu and Wang, {W. C.} and Chang, {W. L.} and Yu, {K. H.} and Feng, {S. C.} and Yan, {J. H.}",
year = "1999",
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Liu, W-C, Wang, WC, Chang, WL, Yu, KH, Feng, SC & Yan, JH 1999, 'New InGaP/GaAs double heterojunction bipolar transistor (DHBT) with a δ-doped wide-gap collector' Paper presented at Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices, Perth, WA, Aust, 98-12-14 - 98-12-16, pp. 243-245.

New InGaP/GaAs double heterojunction bipolar transistor (DHBT) with a δ-doped wide-gap collector. / Liu, Wen-Chau; Wang, W. C.; Chang, W. L.; Yu, K. H.; Feng, S. C.; Yan, J. H.

1999. 243-245 Paper presented at Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices, Perth, WA, Aust, .

Research output: Contribution to conferencePaper

TY - CONF

T1 - New InGaP/GaAs double heterojunction bipolar transistor (DHBT) with a δ-doped wide-gap collector

AU - Liu, Wen-Chau

AU - Wang, W. C.

AU - Chang, W. L.

AU - Yu, K. H.

AU - Feng, S. C.

AU - Yan, J. H.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - An In 0.5 Ga 0.5 P/GaAs double heterojunction bipolar transistor (DHBT) with a δ-doped wide-gap collector structure has been fabricated and studied. Experimental results show that this device exhibits the advantages of a small offset voltage of 50 mV, a small saturation voltage of 1 V, and a large breakdown voltage of 20 V with a current gain of 20. These good characteristics are mainly due to the complete elimination of potential spike at emitter-base (E-B) and base-collector (B-C) heterojunction. Consequently, the studied device shows a good promise for high-speed, high-power, lower-power consumption and large input signal circuit applications.

AB - An In 0.5 Ga 0.5 P/GaAs double heterojunction bipolar transistor (DHBT) with a δ-doped wide-gap collector structure has been fabricated and studied. Experimental results show that this device exhibits the advantages of a small offset voltage of 50 mV, a small saturation voltage of 1 V, and a large breakdown voltage of 20 V with a current gain of 20. These good characteristics are mainly due to the complete elimination of potential spike at emitter-base (E-B) and base-collector (B-C) heterojunction. Consequently, the studied device shows a good promise for high-speed, high-power, lower-power consumption and large input signal circuit applications.

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M3 - Paper

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Liu W-C, Wang WC, Chang WL, Yu KH, Feng SC, Yan JH. New InGaP/GaAs double heterojunction bipolar transistor (DHBT) with a δ-doped wide-gap collector. 1999. Paper presented at Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices, Perth, WA, Aust, .