New In0.5Ga0.5P/GaAs double heterojunction bipolar transistor (DHBT) prepared by MOCVD

W. C. Liu, S. Y. Cheng, H. J. Pan, J. Y. Chen, W. C. Wang, S. C. Feng, K. H. Yu

Research output: Contribution to journalConference articlepeer-review


A new In0.5Ga0.5P/GaAs double heterojunction bipolar transistor (DHBT) with a δ-doped wide-gap collector structure has been grown by a LPMOCVD system. Experimental results show that this device exhibits the advantages of a small offset voltage of 50 mV, a small saturation voltage of 1 V, and a large breakdown voltage of 20 V with a current gain of 20. These good characteristics are mainly due to the complete elimination of potential spike at emitter-base (E-B) and base-collector (B-C) heterojunction. Consequently, the studied device shows a good promise for high-speed, high-power, lower-power consumption and large input signal circuit applications.

Original languageEnglish
Pages (from-to)Pr8-1155 - Pr8-1161
JournalJournal De Physique. IV : JP
Volume9 pt 2
Issue number8
Publication statusPublished - 1999 Sept
EventProceedings of the 1999 12th European Conference on Chemical Vapour Deposition ((EUROCVD12) - Barcelona, Spain
Duration: 1999 Sept 51999 Sept 10

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy


Dive into the research topics of 'New In0.5Ga0.5P/GaAs double heterojunction bipolar transistor (DHBT) prepared by MOCVD'. Together they form a unique fingerprint.

Cite this