New In0.5Ga0.5P/GaAs double heterojunction bipolar transistor (DHBT) prepared by MOCVD

W. C. Liu; S. Y. Cheng; H. J. Pan; J. Y. Chen; W. C. Wang; S. C. Feng; K. H. Yu

New In_0.5Ga_0.5P/GaAs double heterojunction bipolar transistor (DHBT) prepared by MOCVD

W. C. Liu, S. Y. Cheng, H. J. Pan, J. Y. Chen, W. C. Wang, S. C. Feng, K. H. Yu

Research output: Contribution to journal › Conference article › peer-review

Abstract

A new In_0.5Ga_0.5P/GaAs double heterojunction bipolar transistor (DHBT) with a δ-doped wide-gap collector structure has been grown by a LPMOCVD system. Experimental results show that this device exhibits the advantages of a small offset voltage of 50 mV, a small saturation voltage of 1 V, and a large breakdown voltage of 20 V with a current gain of 20. These good characteristics are mainly due to the complete elimination of potential spike at emitter-base (E-B) and base-collector (B-C) heterojunction. Consequently, the studied device shows a good promise for high-speed, high-power, lower-power consumption and large input signal circuit applications.

Original language	English
Pages (from-to)	Pr8-1155 - Pr8-1161
Journal	Journal De Physique. IV : JP
Volume	9 pt 2
Issue number	8
Publication status	Published - 1999 Sept
Event	Proceedings of the 1999 12th European Conference on Chemical Vapour Deposition ((EUROCVD12) - Barcelona, Spain Duration: 1999 Sept 5 → 1999 Sept 10

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

Cite this

@article{7d1b7c1acd654065acad00705836f225,

title = "New In0.5Ga0.5P/GaAs double heterojunction bipolar transistor (DHBT) prepared by MOCVD",

abstract = "A new In0.5Ga0.5P/GaAs double heterojunction bipolar transistor (DHBT) with a δ-doped wide-gap collector structure has been grown by a LPMOCVD system. Experimental results show that this device exhibits the advantages of a small offset voltage of 50 mV, a small saturation voltage of 1 V, and a large breakdown voltage of 20 V with a current gain of 20. These good characteristics are mainly due to the complete elimination of potential spike at emitter-base (E-B) and base-collector (B-C) heterojunction. Consequently, the studied device shows a good promise for high-speed, high-power, lower-power consumption and large input signal circuit applications.",

author = "Liu, {W. C.} and Cheng, {S. Y.} and Pan, {H. J.} and Chen, {J. Y.} and Wang, {W. C.} and Feng, {S. C.} and Yu, {K. H.}",

note = "Copyright: Copyright 2004 Elsevier Science B.V., Amsterdam. All rights reserved.; Proceedings of the 1999 12th European Conference on Chemical Vapour Deposition ((EUROCVD12) ; Conference date: 05-09-1999 Through 10-09-1999",

year = "1999",

month = sep,

language = "English",

volume = "9 pt 2",

pages = "Pr8--1155 -- Pr8--1161",

journal = "Journal De Physique. IV : JP",

issn = "1155-4339",

publisher = "Springer Verlag",

number = "8",

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TY - JOUR

T1 - New In0.5Ga0.5P/GaAs double heterojunction bipolar transistor (DHBT) prepared by MOCVD

AU - Liu, W. C.

AU - Cheng, S. Y.

AU - Pan, H. J.

AU - Chen, J. Y.

AU - Wang, W. C.

AU - Feng, S. C.

AU - Yu, K. H.

PY - 1999/9

Y1 - 1999/9

N2 - A new In0.5Ga0.5P/GaAs double heterojunction bipolar transistor (DHBT) with a δ-doped wide-gap collector structure has been grown by a LPMOCVD system. Experimental results show that this device exhibits the advantages of a small offset voltage of 50 mV, a small saturation voltage of 1 V, and a large breakdown voltage of 20 V with a current gain of 20. These good characteristics are mainly due to the complete elimination of potential spike at emitter-base (E-B) and base-collector (B-C) heterojunction. Consequently, the studied device shows a good promise for high-speed, high-power, lower-power consumption and large input signal circuit applications.

AB - A new In0.5Ga0.5P/GaAs double heterojunction bipolar transistor (DHBT) with a δ-doped wide-gap collector structure has been grown by a LPMOCVD system. Experimental results show that this device exhibits the advantages of a small offset voltage of 50 mV, a small saturation voltage of 1 V, and a large breakdown voltage of 20 V with a current gain of 20. These good characteristics are mainly due to the complete elimination of potential spike at emitter-base (E-B) and base-collector (B-C) heterojunction. Consequently, the studied device shows a good promise for high-speed, high-power, lower-power consumption and large input signal circuit applications.

UR - http://www.scopus.com/inward/record.url?scp=0033188114&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033188114&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0033188114

SN - 1155-4339

VL - 9 pt 2

SP - Pr8-1155 - Pr8-1161

JO - Journal De Physique. IV : JP

JF - Journal De Physique. IV : JP

IS - 8

T2 - Proceedings of the 1999 12th European Conference on Chemical Vapour Deposition ((EUROCVD12)

Y2 - 5 September 1999 through 10 September 1999

ER -

New In_0.5Ga_0.5P/GaAs double heterojunction bipolar transistor (DHBT) prepared by MOCVD

Abstract

All Science Journal Classification (ASJC) codes

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