New In0.5Ga0.5P/GaAs double heterojunction bipolar transistor (DHBT) prepared by MOCVD

W. C. Liu; S. Y. Cheng; H. J. Pan; J. Y. Chen; W. C. Wang; S. C. Feng; K. H. Yu

New In_0.5Ga_0.5P/GaAs double heterojunction bipolar transistor (DHBT) prepared by MOCVD

W. C. Liu
, S. Y. Cheng
, H. J. Pan
, J. Y. Chen
, W. C. Wang
, S. C. Feng
, K. H. Yu

Research output: Contribution to journal › Conference article › peer-review

Abstract

A new In_0.5Ga_0.5P/GaAs double heterojunction bipolar transistor (DHBT) with a δ-doped wide-gap collector structure has been grown by a LPMOCVD system. Experimental results show that this device exhibits the advantages of a small offset voltage of 50 mV, a small saturation voltage of 1 V, and a large breakdown voltage of 20 V with a current gain of 20. These good characteristics are mainly due to the complete elimination of potential spike at emitter-base (E-B) and base-collector (B-C) heterojunction. Consequently, the studied device shows a good promise for high-speed, high-power, lower-power consumption and large input signal circuit applications.

Original language	English
Pages (from-to)	Pr8-1155 - Pr8-1161
Journal	Journal De Physique. IV : JP
Volume	9 pt 2
Issue number	8
Publication status	Published - 1999 Sept
Event	Proceedings of the 1999 12th European Conference on Chemical Vapour Deposition ((EUROCVD12) - Barcelona, Spain Duration: 1999 Sept 5 → 1999 Sept 10

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

Cite this

@article{7d1b7c1acd654065acad00705836f225,

title = "New In0.5Ga0.5P/GaAs double heterojunction bipolar transistor (DHBT) prepared by MOCVD",

abstract = "A new In0.5Ga0.5P/GaAs double heterojunction bipolar transistor (DHBT) with a δ-doped wide-gap collector structure has been grown by a LPMOCVD system. Experimental results show that this device exhibits the advantages of a small offset voltage of 50 mV, a small saturation voltage of 1 V, and a large breakdown voltage of 20 V with a current gain of 20. These good characteristics are mainly due to the complete elimination of potential spike at emitter-base (E-B) and base-collector (B-C) heterojunction. Consequently, the studied device shows a good promise for high-speed, high-power, lower-power consumption and large input signal circuit applications.",

author = "Liu, \{W. C.\} and Cheng, \{S. Y.\} and Pan, \{H. J.\} and Chen, \{J. Y.\} and Wang, \{W. C.\} and Feng, \{S. C.\} and Yu, \{K. H.\}",

note = "Copyright: Copyright 2004 Elsevier Science B.V., Amsterdam. All rights reserved.; Proceedings of the 1999 12th European Conference on Chemical Vapour Deposition ((EUROCVD12) ; Conference date: 05-09-1999 Through 10-09-1999",

year = "1999",

month = sep,

language = "English",

volume = "9 pt 2",

pages = "Pr8--1155 -- Pr8--1161",

journal = "Journal De Physique. IV : JP",

issn = "1155-4339",

publisher = "Springer Verlag",

number = "8",

}

TY - JOUR

T1 - New In0.5Ga0.5P/GaAs double heterojunction bipolar transistor (DHBT) prepared by MOCVD

AU - Liu, W. C.

AU - Cheng, S. Y.

AU - Pan, H. J.

AU - Chen, J. Y.

AU - Wang, W. C.

AU - Feng, S. C.

AU - Yu, K. H.

PY - 1999/9

Y1 - 1999/9

N2 - A new In0.5Ga0.5P/GaAs double heterojunction bipolar transistor (DHBT) with a δ-doped wide-gap collector structure has been grown by a LPMOCVD system. Experimental results show that this device exhibits the advantages of a small offset voltage of 50 mV, a small saturation voltage of 1 V, and a large breakdown voltage of 20 V with a current gain of 20. These good characteristics are mainly due to the complete elimination of potential spike at emitter-base (E-B) and base-collector (B-C) heterojunction. Consequently, the studied device shows a good promise for high-speed, high-power, lower-power consumption and large input signal circuit applications.

AB - A new In0.5Ga0.5P/GaAs double heterojunction bipolar transistor (DHBT) with a δ-doped wide-gap collector structure has been grown by a LPMOCVD system. Experimental results show that this device exhibits the advantages of a small offset voltage of 50 mV, a small saturation voltage of 1 V, and a large breakdown voltage of 20 V with a current gain of 20. These good characteristics are mainly due to the complete elimination of potential spike at emitter-base (E-B) and base-collector (B-C) heterojunction. Consequently, the studied device shows a good promise for high-speed, high-power, lower-power consumption and large input signal circuit applications.

UR - https://www.scopus.com/pages/publications/0033188114

UR - https://www.scopus.com/pages/publications/0033188114#tab=citedBy

M3 - Conference article

AN - SCOPUS:0033188114

SN - 1155-4339

VL - 9 pt 2

SP - Pr8-1155 - Pr8-1161

JO - Journal De Physique. IV : JP

JF - Journal De Physique. IV : JP

IS - 8

T2 - Proceedings of the 1999 12th European Conference on Chemical Vapour Deposition ((EUROCVD12)

Y2 - 5 September 1999 through 10 September 1999

ER -

New In_0.5Ga_0.5P/GaAs double heterojunction bipolar transistor (DHBT) prepared by MOCVD

Abstract

All Science Journal Classification (ASJC) codes

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