New method of modelling a multipeak resonant tunnelling diode

C. Y. Huang, J. E. Morris, Y. K. Su, Tai-Haur Kuo

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The authors report an improved approach to modelling the I-V characteristics of a multipeak resonant tunnelling diode (RTD). The merit of this new RTD model is demonstrated.

Original languageEnglish
Pages (from-to)1012-1013
Number of pages2
JournalElectronics Letters
Volume30
Issue number12
DOIs
Publication statusPublished - 1994 Jun 9

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Resonant tunneling diodes

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Huang, C. Y. ; Morris, J. E. ; Su, Y. K. ; Kuo, Tai-Haur. / New method of modelling a multipeak resonant tunnelling diode. In: Electronics Letters. 1994 ; Vol. 30, No. 12. pp. 1012-1013.
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New method of modelling a multipeak resonant tunnelling diode. / Huang, C. Y.; Morris, J. E.; Su, Y. K.; Kuo, Tai-Haur.

In: Electronics Letters, Vol. 30, No. 12, 09.06.1994, p. 1012-1013.

Research output: Contribution to journalArticle

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