New method of modelling a multipeak resonant tunnelling diode

C. Y. Huang; J. E. Morris; Y. K. Su; T. H. Kuo

doi:10.1049/el:19940636

New method of modelling a multipeak resonant tunnelling diode

C. Y. Huang, J. E. Morris, Y. K. Su, T. H. Kuo

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

The authors report an improved approach to modelling the I-V characteristics of a multipeak resonant tunnelling diode (RTD). The merit of this new RTD model is demonstrated.

Original language	English
Pages (from-to)	1012-1013
Number of pages	2
Journal	Electronics Letters
Volume	30
Issue number	12
DOIs	https://doi.org/10.1049/el:19940636
Publication status	Published - 1994 Jun 9

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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title = "New method of modelling a multipeak resonant tunnelling diode",

abstract = "The authors report an improved approach to modelling the I-V characteristics of a multipeak resonant tunnelling diode (RTD). The merit of this new RTD model is demonstrated.",

author = "Huang, {C. Y.} and Morris, {J. E.} and Su, {Y. K.} and Kuo, {T. H.}",

year = "1994",

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AU - Huang, C. Y.

AU - Morris, J. E.

AU - Su, Y. K.

AU - Kuo, T. H.

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N2 - The authors report an improved approach to modelling the I-V characteristics of a multipeak resonant tunnelling diode (RTD). The merit of this new RTD model is demonstrated.

AB - The authors report an improved approach to modelling the I-V characteristics of a multipeak resonant tunnelling diode (RTD). The merit of this new RTD model is demonstrated.

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JF - Electronics Letters

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New method of modelling a multipeak resonant tunnelling diode

Abstract

All Science Journal Classification (ASJC) codes

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