New self-aligned T-gate InGaP/GaAs field-effect transistors grown by LP-MOCVD

W. S. Lour, W. L. Chang, Y. M. Shih, Wen-Chau Liu

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

This paper reports on self-aligned T-gate InGaP/GaAs FET's using n+/N+/δ(P+)/n structures. N+-InGaP//δ(P+)-InGaP/n-GaAs forms a planar-doped barrier. The inherent ohmic gate of camel-gate FET's together with a highly selective etch between an InGaP and a GaAs layers offers a self-aligned T-shape gate with a reduced effective length. A fabricated device with a reduced gate dimension of 1.5×100 (0.6×100) μm2 obtained from 2×100 (1×100) μm2 gate metal exhibits an extrinsic transconductance, unity-current gain frequency, and unity-power gain frequency of 78 (80) mS/mm, 9 (19.5), and 28 (30) GHz, respectively.

Original languageEnglish
Pages (from-to)304-306
Number of pages3
JournalIEEE Electron Device Letters
Volume20
Issue number6
DOIs
Publication statusPublished - 1999 Jun 1

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Metallorganic chemical vapor deposition
Field effect transistors
Transconductance
Metals
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Lour, W. S. ; Chang, W. L. ; Shih, Y. M. ; Liu, Wen-Chau. / New self-aligned T-gate InGaP/GaAs field-effect transistors grown by LP-MOCVD. In: IEEE Electron Device Letters. 1999 ; Vol. 20, No. 6. pp. 304-306.
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New self-aligned T-gate InGaP/GaAs field-effect transistors grown by LP-MOCVD. / Lour, W. S.; Chang, W. L.; Shih, Y. M.; Liu, Wen-Chau.

In: IEEE Electron Device Letters, Vol. 20, No. 6, 01.06.1999, p. 304-306.

Research output: Contribution to journalArticle

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