New self-aligned T-gate InGaP/GaAs field-effect transistors grown by LP-MOCVD

W. S. Lour; W. L. Chang; Y. M. Shih; W. C. Liu

doi:10.1109/55.767106

New self-aligned T-gate InGaP/GaAs field-effect transistors grown by LP-MOCVD

W. S. Lour, W. L. Chang, Y. M. Shih, W. C. Liu

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

This paper reports on self-aligned T-gate InGaP/GaAs FET's using n⁺/N⁺/δ(P⁺)/n structures. N⁺-InGaP//δ(P⁺)-InGaP/n-GaAs forms a planar-doped barrier. The inherent ohmic gate of camel-gate FET's together with a highly selective etch between an InGaP and a GaAs layers offers a self-aligned T-shape gate with a reduced effective length. A fabricated device with a reduced gate dimension of 1.5×100 (0.6×100) μm² obtained from 2×100 (1×100) μm² gate metal exhibits an extrinsic transconductance, unity-current gain frequency, and unity-power gain frequency of 78 (80) mS/mm, 9 (19.5), and 28 (30) GHz, respectively.

Original language	English
Pages (from-to)	304-306
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	20
Issue number	6
DOIs	https://doi.org/10.1109/55.767106
Publication status	Published - 1999 Jun

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/55.767106

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title = "New self-aligned T-gate InGaP/GaAs field-effect transistors grown by LP-MOCVD",

abstract = "This paper reports on self-aligned T-gate InGaP/GaAs FET's using n+/N+/δ(P+)/n structures. N+-InGaP//δ(P+)-InGaP/n-GaAs forms a planar-doped barrier. The inherent ohmic gate of camel-gate FET's together with a highly selective etch between an InGaP and a GaAs layers offers a self-aligned T-shape gate with a reduced effective length. A fabricated device with a reduced gate dimension of 1.5×100 (0.6×100) μm2 obtained from 2×100 (1×100) μm2 gate metal exhibits an extrinsic transconductance, unity-current gain frequency, and unity-power gain frequency of 78 (80) mS/mm, 9 (19.5), and 28 (30) GHz, respectively.",

author = "Lour, {W. S.} and Chang, {W. L.} and Shih, {Y. M.} and Liu, {W. C.}",

note = "Funding Information: Manuscript received November 5, 1998; revised December 22, 1998. This work was supported in part by the National Science Council under Contract NSC 87-2215-E-019-001. W.-S. Lour and Y. M. Shih are with the Department of Electrical Engineering, National Taiwan-Ocean University, Keelung, Taiwan, R.O.C. W. L. Chang and W. C. Liu are with the Department of Electrical Engineering, National Cheng-Kung University, Tainan, Taiwan, R.O.C. Publisher Item Identifier S 0741-3106(99)04412-2.",

year = "1999",

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doi = "10.1109/55.767106",

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journal = "IEEE Electron Device Letters",

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AU - Lour, W. S.

AU - Chang, W. L.

AU - Shih, Y. M.

AU - Liu, W. C.

N1 - Funding Information: Manuscript received November 5, 1998; revised December 22, 1998. This work was supported in part by the National Science Council under Contract NSC 87-2215-E-019-001. W.-S. Lour and Y. M. Shih are with the Department of Electrical Engineering, National Taiwan-Ocean University, Keelung, Taiwan, R.O.C. W. L. Chang and W. C. Liu are with the Department of Electrical Engineering, National Cheng-Kung University, Tainan, Taiwan, R.O.C. Publisher Item Identifier S 0741-3106(99)04412-2.

PY - 1999/6

Y1 - 1999/6

N2 - This paper reports on self-aligned T-gate InGaP/GaAs FET's using n+/N+/δ(P+)/n structures. N+-InGaP//δ(P+)-InGaP/n-GaAs forms a planar-doped barrier. The inherent ohmic gate of camel-gate FET's together with a highly selective etch between an InGaP and a GaAs layers offers a self-aligned T-shape gate with a reduced effective length. A fabricated device with a reduced gate dimension of 1.5×100 (0.6×100) μm2 obtained from 2×100 (1×100) μm2 gate metal exhibits an extrinsic transconductance, unity-current gain frequency, and unity-power gain frequency of 78 (80) mS/mm, 9 (19.5), and 28 (30) GHz, respectively.

AB - This paper reports on self-aligned T-gate InGaP/GaAs FET's using n+/N+/δ(P+)/n structures. N+-InGaP//δ(P+)-InGaP/n-GaAs forms a planar-doped barrier. The inherent ohmic gate of camel-gate FET's together with a highly selective etch between an InGaP and a GaAs layers offers a self-aligned T-shape gate with a reduced effective length. A fabricated device with a reduced gate dimension of 1.5×100 (0.6×100) μm2 obtained from 2×100 (1×100) μm2 gate metal exhibits an extrinsic transconductance, unity-current gain frequency, and unity-power gain frequency of 78 (80) mS/mm, 9 (19.5), and 28 (30) GHz, respectively.

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New self-aligned T-gate InGaP/GaAs field-effect transistors grown by LP-MOCVD

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