New silicon-on-insulator technology using a two-step oxidation technique

Physics & Astronomy

• insulators 100%
• oxidation 99%
• porous silicon 97%
• silicon 73%
• porosity 32%
• oxygen 27%
• silicon transistors 20%
• silicon oxides 15%
• electrical faults 14%
• metal oxides 14%
• integrated circuits 14%
• molecular beam epitaxy 12%
• leakage 12%
• field effect transistors 11%
• current density 10%
• expansion 9%
• oxides 9%