New structure of three-terminal gaas p + -n-δ(p +)-n--n+ switching device prepared by molecular beam epitaxy

The concept to modulate the internal barrier of a regenerative switching device is proposed. A new structure of three-terminal GaAs p+-n--δ(p+)-n--n+ switching device prepared by molecular beam epitaxy is successfully developed. The third terminal was directly contacted to the δ(p+) barrier using the V-groove etching technique, in which the δ(p+) barrier height can be directly modulated by the external voltage. It is a voltage-controlled device.