New structure of three-terminal gaas p + -n-δ(p +)-n--n+ switching device prepared by molecular beam epitaxy

Y. H. Wang, K. F. Yarn, C. Y. Chang, M. S. Jame, Y. H. Wang

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

The concept to modulate the internal barrier of a regenerative switching device is proposed. A new structure of three-terminal GaAs p+-n--δ(p+)-n--n+ switching device prepared by molecular beam epitaxy is successfully developed. The third terminal was directly contacted to the δ(p+) barrier using the V-groove etching technique, in which the δ(p+) barrier height can be directly modulated by the external voltage. It is a voltage-controlled device.

Original languageEnglish
Pages (from-to)873-874
Number of pages2
JournalElectronics Letters
Volume23
Issue number17
DOIs
Publication statusPublished - 1987 Jan 1

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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