New wide voltage operation regime double heterojunction bipolar transistor

Shiou Ying Cheng, Hsi Jen Pan, Shun Ching Feng, Kuo Hui Yu, Jung Hui Tsai, Wen Chau Liu

Research output: Contribution to journalArticlepeer-review

Abstract

A new wide voltage operation regime double heterojunction bipolar transistor has been fabricated successfully and studied. A very small offset voltage of 50 mV, a small saturation voltage of 1 V, a large breakdown voltage higher than 20 V and current gain of 60 are obtained. In addition, the studied device exhibits a very wide output voltage operation swing in its transistor action. Therefore, the studied device shows promise for high-speed, high-power and large input signal circuit applications.

Original languageEnglish
Pages (from-to)581-585
Number of pages5
JournalSolid-State Electronics
Volume44
Issue number4
DOIs
Publication statusPublished - 2000 Apr 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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