(NH4)2 Sx -treated AlGaN MIS photodetectors with LPD SiO2 layer

C. H. Lan, J. D. Hwang, Shoou-Jinn Chang, Y. C. Cheng, W. J. Lin, J. C. Lin, J. S. Liao, Y. L. Lin

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Abstract

(NH4)2 Sx treatment was employed to enhance the efficiency of AlGaN metal-insulator-semiconductor (MIS) photodetectors (PDs) with a liquid phase deposited (LPD) SiO2 layer. With (NH4)2 Sx treatment, one can reduce the reverse leakage current of the PD by 2 orders of magnitude and enhance the effective Schottky barrier height from 0.77 to 0.86 eV. Also, the (NH 4)2 Sx treatment can also significantly reduce the interface state density, Dit, at the AlGaN/LPD oxide interface. Photo-to-dark current ratio observed from the PDs with (NH4) 2 Sx treatment was also significantly larger.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume157
Issue number6
DOIs
Publication statusPublished - 2010 Nov 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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