(NH4)2 Sx -treated AlGaN MIS photodetectors with LPD SiO2 layer

C. H. Lan, J. D. Hwang, Shoou-Jinn Chang, Y. C. Cheng, W. J. Lin, J. C. Lin, J. S. Liao, Y. L. Lin

Research output: Contribution to journalArticle

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Abstract

(NH4)2 Sx treatment was employed to enhance the efficiency of AlGaN metal-insulator-semiconductor (MIS) photodetectors (PDs) with a liquid phase deposited (LPD) SiO2 layer. With (NH4)2 Sx treatment, one can reduce the reverse leakage current of the PD by 2 orders of magnitude and enhance the effective Schottky barrier height from 0.77 to 0.86 eV. Also, the (NH 4)2 Sx treatment can also significantly reduce the interface state density, Dit, at the AlGaN/LPD oxide interface. Photo-to-dark current ratio observed from the PDs with (NH4) 2 Sx treatment was also significantly larger.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume157
Issue number6
DOIs
Publication statusPublished - 2010 Nov 1

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Photodetectors
Metals
Semiconductor materials
Liquids
Interface states
Dark currents
Leakage currents
Oxides
aluminum gallium nitride

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Cite this

Lan, C. H., Hwang, J. D., Chang, S-J., Cheng, Y. C., Lin, W. J., Lin, J. C., ... Lin, Y. L. (2010). (NH4)2 Sx -treated AlGaN MIS photodetectors with LPD SiO2 layer. Journal of the Electrochemical Society, 157(6). https://doi.org/10.1149/1.3374659
Lan, C. H. ; Hwang, J. D. ; Chang, Shoou-Jinn ; Cheng, Y. C. ; Lin, W. J. ; Lin, J. C. ; Liao, J. S. ; Lin, Y. L. / (NH4)2 Sx -treated AlGaN MIS photodetectors with LPD SiO2 layer. In: Journal of the Electrochemical Society. 2010 ; Vol. 157, No. 6.
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(NH4)2 Sx -treated AlGaN MIS photodetectors with LPD SiO2 layer. / Lan, C. H.; Hwang, J. D.; Chang, Shoou-Jinn; Cheng, Y. C.; Lin, W. J.; Lin, J. C.; Liao, J. S.; Lin, Y. L.

In: Journal of the Electrochemical Society, Vol. 157, No. 6, 01.11.2010.

Research output: Contribution to journalArticle

TY - JOUR

T1 - (NH4)2 Sx -treated AlGaN MIS photodetectors with LPD SiO2 layer

AU - Lan, C. H.

AU - Hwang, J. D.

AU - Chang, Shoou-Jinn

AU - Cheng, Y. C.

AU - Lin, W. J.

AU - Lin, J. C.

AU - Liao, J. S.

AU - Lin, Y. L.

PY - 2010/11/1

Y1 - 2010/11/1

N2 - (NH4)2 Sx treatment was employed to enhance the efficiency of AlGaN metal-insulator-semiconductor (MIS) photodetectors (PDs) with a liquid phase deposited (LPD) SiO2 layer. With (NH4)2 Sx treatment, one can reduce the reverse leakage current of the PD by 2 orders of magnitude and enhance the effective Schottky barrier height from 0.77 to 0.86 eV. Also, the (NH 4)2 Sx treatment can also significantly reduce the interface state density, Dit, at the AlGaN/LPD oxide interface. Photo-to-dark current ratio observed from the PDs with (NH4) 2 Sx treatment was also significantly larger.

AB - (NH4)2 Sx treatment was employed to enhance the efficiency of AlGaN metal-insulator-semiconductor (MIS) photodetectors (PDs) with a liquid phase deposited (LPD) SiO2 layer. With (NH4)2 Sx treatment, one can reduce the reverse leakage current of the PD by 2 orders of magnitude and enhance the effective Schottky barrier height from 0.77 to 0.86 eV. Also, the (NH 4)2 Sx treatment can also significantly reduce the interface state density, Dit, at the AlGaN/LPD oxide interface. Photo-to-dark current ratio observed from the PDs with (NH4) 2 Sx treatment was also significantly larger.

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