(NH4)2 Sx -treated AlGaN MIS photodetectors with LPD SiO2 layer

C. H. Lan; J. D. Hwang; S. J. Chang; Y. C. Cheng; W. J. Lin; J. C. Lin; J. S. Liao; Y. L. Lin

doi:10.1149/1.3374659

(NH₄)₂ S_x -treated AlGaN MIS photodetectors with LPD SiO₂ layer

C. H. Lan
, J. D. Hwang
, S. J. Chang
, Y. C. Cheng
, W. J. Lin
, J. C. Lin
, J. S. Liao
, Y. L. Lin

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

(NH₄)₂ S_x treatment was employed to enhance the efficiency of AlGaN metal-insulator-semiconductor (MIS) photodetectors (PDs) with a liquid phase deposited (LPD) SiO₂ layer. With (NH₄)₂ S_x treatment, one can reduce the reverse leakage current of the PD by 2 orders of magnitude and enhance the effective Schottky barrier height from 0.77 to 0.86 eV. Also, the (NH ₄)₂ S_x treatment can also significantly reduce the interface state density, Dit, at the AlGaN/LPD oxide interface. Photo-to-dark current ratio observed from the PDs with (NH₄) ₂ S_x treatment was also significantly larger.

Original language	English
Pages (from-to)	H613-H616
Journal	Journal of the Electrochemical Society
Volume	157
Issue number	6
DOIs	https://doi.org/10.1149/1.3374659
Publication status	Published - 2010

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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title = "(NH4)2 Sx -treated AlGaN MIS photodetectors with LPD SiO2 layer",

abstract = "(NH4)2 Sx treatment was employed to enhance the efficiency of AlGaN metal-insulator-semiconductor (MIS) photodetectors (PDs) with a liquid phase deposited (LPD) SiO2 layer. With (NH4)2 Sx treatment, one can reduce the reverse leakage current of the PD by 2 orders of magnitude and enhance the effective Schottky barrier height from 0.77 to 0.86 eV. Also, the (NH 4)2 Sx treatment can also significantly reduce the interface state density, Dit, at the AlGaN/LPD oxide interface. Photo-to-dark current ratio observed from the PDs with (NH4) 2 Sx treatment was also significantly larger.",

author = "Lan, \{C. H.\} and Hwang, \{J. D.\} and Chang, \{S. J.\} and Cheng, \{Y. C.\} and Lin, \{W. J.\} and Lin, \{J. C.\} and Liao, \{J. S.\} and Lin, \{Y. L.\}",

year = "2010",

doi = "10.1149/1.3374659",

language = "English",

volume = "157",

pages = "H613--H616",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Institute of Physics",

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TY - JOUR

T1 - (NH4)2 Sx -treated AlGaN MIS photodetectors with LPD SiO2 layer

AU - Lan, C. H.

AU - Hwang, J. D.

AU - Chang, S. J.

AU - Cheng, Y. C.

AU - Lin, W. J.

AU - Lin, J. C.

AU - Liao, J. S.

AU - Lin, Y. L.

PY - 2010

Y1 - 2010

N2 - (NH4)2 Sx treatment was employed to enhance the efficiency of AlGaN metal-insulator-semiconductor (MIS) photodetectors (PDs) with a liquid phase deposited (LPD) SiO2 layer. With (NH4)2 Sx treatment, one can reduce the reverse leakage current of the PD by 2 orders of magnitude and enhance the effective Schottky barrier height from 0.77 to 0.86 eV. Also, the (NH 4)2 Sx treatment can also significantly reduce the interface state density, Dit, at the AlGaN/LPD oxide interface. Photo-to-dark current ratio observed from the PDs with (NH4) 2 Sx treatment was also significantly larger.

AB - (NH4)2 Sx treatment was employed to enhance the efficiency of AlGaN metal-insulator-semiconductor (MIS) photodetectors (PDs) with a liquid phase deposited (LPD) SiO2 layer. With (NH4)2 Sx treatment, one can reduce the reverse leakage current of the PD by 2 orders of magnitude and enhance the effective Schottky barrier height from 0.77 to 0.86 eV. Also, the (NH 4)2 Sx treatment can also significantly reduce the interface state density, Dit, at the AlGaN/LPD oxide interface. Photo-to-dark current ratio observed from the PDs with (NH4) 2 Sx treatment was also significantly larger.

UR - https://www.scopus.com/pages/publications/77958569311

UR - https://www.scopus.com/pages/publications/77958569311#tab=citedBy

U2 - 10.1149/1.3374659

DO - 10.1149/1.3374659

M3 - Article

AN - SCOPUS:77958569311

SN - 0013-4651

VL - 157

SP - H613-H616

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 6

ER -

(NH₄)₂ S_x -treated AlGaN MIS photodetectors with LPD SiO₂ layer

Abstract

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