Ni/Au contacts on homoepitaxial p-ZnSe with surface oxygen plasma treatments

T. K. Lin; K. T. Lam; S. J. Chang; Y. Z. Chiou; S. P. Chang

doi:10.1116/1.2433974

Ni/Au contacts on homoepitaxial p-ZnSe with surface oxygen plasma treatments

T. K. Lin, K. T. Lam, S. J. Chang, Y. Z. Chiou, S. P. Chang

Research output: Contribution to journal › Article › peer-review

Abstract

Contact properties of NiAu on homoepitaxial p-ZnSe with oxygen plasma treatments were investigated. The authors found that Zn distribution profiles for p-ZnSe with and without treatments were almost identical. They also found that Se concentration near the surface decreased while O concentration near the surface increased after oxygen plasma treatment. They also observed hillocks, which were related to Se vacancies and/or isoelectronic oxygen impurities, on the surface of 15 W oxygen plasma-treated samples. Furthermore, they found that they could achieve the lowest offset voltage from the sample treated with 15 W oxygen plasma.

Original language	English
Pages (from-to)	213-216
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	25
Issue number	1
DOIs	https://doi.org/10.1116/1.2433974
Publication status	Published - 2007

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

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title = "Ni/Au contacts on homoepitaxial p-ZnSe with surface oxygen plasma treatments",

abstract = "Contact properties of NiAu on homoepitaxial p-ZnSe with oxygen plasma treatments were investigated. The authors found that Zn distribution profiles for p-ZnSe with and without treatments were almost identical. They also found that Se concentration near the surface decreased while O concentration near the surface increased after oxygen plasma treatment. They also observed hillocks, which were related to Se vacancies and/or isoelectronic oxygen impurities, on the surface of 15 W oxygen plasma-treated samples. Furthermore, they found that they could achieve the lowest offset voltage from the sample treated with 15 W oxygen plasma.",

author = "Lin, {T. K.} and Lam, {K. T.} and Chang, {S. J.} and Chiou, {Y. Z.} and Chang, {S. P.}",

note = "Funding Information: This work was supported by National Science Council of Taiwan under Contract Nos. NSC-93-2623-7-006-003 and NSC 93-2215-E-218-013. ",

year = "2007",

doi = "10.1116/1.2433974",

language = "English",

volume = "25",

pages = "213--216",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

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TY - JOUR

T1 - Ni/Au contacts on homoepitaxial p-ZnSe with surface oxygen plasma treatments

AU - Lin, T. K.

AU - Lam, K. T.

AU - Chang, S. J.

AU - Chiou, Y. Z.

AU - Chang, S. P.

N1 - Funding Information: This work was supported by National Science Council of Taiwan under Contract Nos. NSC-93-2623-7-006-003 and NSC 93-2215-E-218-013.

PY - 2007

Y1 - 2007

N2 - Contact properties of NiAu on homoepitaxial p-ZnSe with oxygen plasma treatments were investigated. The authors found that Zn distribution profiles for p-ZnSe with and without treatments were almost identical. They also found that Se concentration near the surface decreased while O concentration near the surface increased after oxygen plasma treatment. They also observed hillocks, which were related to Se vacancies and/or isoelectronic oxygen impurities, on the surface of 15 W oxygen plasma-treated samples. Furthermore, they found that they could achieve the lowest offset voltage from the sample treated with 15 W oxygen plasma.

AB - Contact properties of NiAu on homoepitaxial p-ZnSe with oxygen plasma treatments were investigated. The authors found that Zn distribution profiles for p-ZnSe with and without treatments were almost identical. They also found that Se concentration near the surface decreased while O concentration near the surface increased after oxygen plasma treatment. They also observed hillocks, which were related to Se vacancies and/or isoelectronic oxygen impurities, on the surface of 15 W oxygen plasma-treated samples. Furthermore, they found that they could achieve the lowest offset voltage from the sample treated with 15 W oxygen plasma.

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Ni/Au contacts on homoepitaxial p-ZnSe with surface oxygen plasma treatments

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