Nitride-based 2DEG photodetectors with a large AC responsivity

S. J. Chang; T. M. Kuan; C. H. Ko; Y. K. Su; J. B. Webb; J. A. Bardwell; Y. Liu; H. Tang; W. J. Lin; Y. T. Cherng; W. H. Lan

doi:10.1016/S0038-1101(03)00246-6

Nitride-based 2DEG photodetectors with a large AC responsivity

S. J. Chang, T. M. Kuan, C. H. Ko, Y. K. Su, J. B. Webb, J. A. Bardwell, Y. Liu, H. Tang, W. J. Lin, Y. T. Cherng, W. H. Lan

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

Nitride-based AlGaN/GaN heterostructure two-dimensional electron gas photodetectors have been successfully fabricated by low-pressure metalorganic vapor phase epitaxy on sapphire substrate. By using such an AlGaN/GaN heterostructure, we could significantly reduce the recombination of photogenerated carriers and thus achieve extremely high photodetector responsivity due to the use of AlGaN/GaN heterostructure. With an incident light wavelength of 270 nm, it was found that the AC responsivity could reach 8.7 × 10⁶ A/W.

Original language	English
Pages (from-to)	2023-2026
Number of pages	4
Journal	Solid-State Electronics
Volume	47
Issue number	11
DOIs	https://doi.org/10.1016/S0038-1101(03)00246-6
Publication status	Published - 2003 Nov

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/S0038-1101(03)00246-6

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@article{518cc95e33514682abb42806ba9c7b4a,

title = "Nitride-based 2DEG photodetectors with a large AC responsivity",

abstract = "Nitride-based AlGaN/GaN heterostructure two-dimensional electron gas photodetectors have been successfully fabricated by low-pressure metalorganic vapor phase epitaxy on sapphire substrate. By using such an AlGaN/GaN heterostructure, we could significantly reduce the recombination of photogenerated carriers and thus achieve extremely high photodetector responsivity due to the use of AlGaN/GaN heterostructure. With an incident light wavelength of 270 nm, it was found that the AC responsivity could reach 8.7 × 106 A/W.",

author = "Chang, {S. J.} and Kuan, {T. M.} and Ko, {C. H.} and Su, {Y. K.} and Webb, {J. B.} and Bardwell, {J. A.} and Y. Liu and H. Tang and Lin, {W. J.} and Cherng, {Y. T.} and Lan, {W. H.}",

note = "Funding Information: The authors would like to acknowledge the financial support from the National Science Council for their research grant of NSC 90-2215-E-008-043.",

year = "2003",

month = nov,

doi = "10.1016/S0038-1101(03)00246-6",

language = "English",

volume = "47",

pages = "2023--2026",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

number = "11",

}

TY - JOUR

T1 - Nitride-based 2DEG photodetectors with a large AC responsivity

AU - Chang, S. J.

AU - Kuan, T. M.

AU - Ko, C. H.

AU - Su, Y. K.

AU - Webb, J. B.

AU - Bardwell, J. A.

AU - Liu, Y.

AU - Tang, H.

AU - Lin, W. J.

AU - Cherng, Y. T.

AU - Lan, W. H.

N1 - Funding Information: The authors would like to acknowledge the financial support from the National Science Council for their research grant of NSC 90-2215-E-008-043.

PY - 2003/11

Y1 - 2003/11

N2 - Nitride-based AlGaN/GaN heterostructure two-dimensional electron gas photodetectors have been successfully fabricated by low-pressure metalorganic vapor phase epitaxy on sapphire substrate. By using such an AlGaN/GaN heterostructure, we could significantly reduce the recombination of photogenerated carriers and thus achieve extremely high photodetector responsivity due to the use of AlGaN/GaN heterostructure. With an incident light wavelength of 270 nm, it was found that the AC responsivity could reach 8.7 × 106 A/W.

AB - Nitride-based AlGaN/GaN heterostructure two-dimensional electron gas photodetectors have been successfully fabricated by low-pressure metalorganic vapor phase epitaxy on sapphire substrate. By using such an AlGaN/GaN heterostructure, we could significantly reduce the recombination of photogenerated carriers and thus achieve extremely high photodetector responsivity due to the use of AlGaN/GaN heterostructure. With an incident light wavelength of 270 nm, it was found that the AC responsivity could reach 8.7 × 106 A/W.

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UR - http://www.scopus.com/inward/citedby.url?scp=0043231405&partnerID=8YFLogxK

U2 - 10.1016/S0038-1101(03)00246-6

DO - 10.1016/S0038-1101(03)00246-6

M3 - Article

AN - SCOPUS:0043231405

SN - 0038-1101

VL - 47

SP - 2023

EP - 2026

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 11

ER -

Nitride-based 2DEG photodetectors with a large AC responsivity

Abstract

All Science Journal Classification (ASJC) codes

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