Nitride-based 2DEG photodetectors with a large AC responsivity

S. J. Chang, T. M. Kuan, C. H. Ko, Y. K. Su, J. B. Webb, J. A. Bardwell, Y. Liu, H. Tang, W. J. Lin, Y. T. Cherng, W. H. Lan

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)


Nitride-based AlGaN/GaN heterostructure two-dimensional electron gas photodetectors have been successfully fabricated by low-pressure metalorganic vapor phase epitaxy on sapphire substrate. By using such an AlGaN/GaN heterostructure, we could significantly reduce the recombination of photogenerated carriers and thus achieve extremely high photodetector responsivity due to the use of AlGaN/GaN heterostructure. With an incident light wavelength of 270 nm, it was found that the AC responsivity could reach 8.7 × 106 A/W.

Original languageEnglish
Pages (from-to)2023-2026
Number of pages4
JournalSolid-State Electronics
Issue number11
Publication statusPublished - 2003 Nov

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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