Nitride-based AlGaN/GaN heterostructure two-dimensional electron gas photodetectors have been successfully fabricated by low-pressure metalorganic vapor phase epitaxy on sapphire substrate. By using such an AlGaN/GaN heterostructure, we could significantly reduce the recombination of photogenerated carriers and thus achieve extremely high photodetector responsivity due to the use of AlGaN/GaN heterostructure. With an incident light wavelength of 270 nm, it was found that the AC responsivity could reach 8.7 × 106 A/W.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry