Nitride-based asymmetric two-step light-emitting diode with In 0.08Ga0.92N shallow step

Cheng Huang Kuo, Y. K. Fu, C. L. Yeh, C. J. Tun, P. H. Chen, Wei Chih Lai, Shoou Jinn Chang

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

A nitride-based asymmetric two-step light-emitting diode (LED) with In 0.08Ga0.92N shallow step was proposed and fabricated. It was found that the low indium content In0.08Ga0.92N layer can significantly enhance phase separation and/or inhomogeneous indium distribution in the active In0.27Ga0.73N layer. It was also found that we can enhance LED output power by a factor of 2.27 by simply inserting an In0.08Ga0.92N shallow step.

Original languageEnglish
Pages (from-to)371-373
Number of pages3
JournalIEEE Photonics Technology Letters
Volume21
Issue number6
DOIs
Publication statusPublished - 2009 Mar 15

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Nitride-based asymmetric two-step light-emitting diode with In <sub>0.08</sub>Ga<sub>0.92</sub>N shallow step'. Together they form a unique fingerprint.

Cite this