Nitride-based blue LEDs with GaN/SiN double buffer layers

C. H. Kuo, S. J. Chang, Y. K. Su, C. K. Wang, L. W. Wu, J. K. Sheu, T. C. Wen, W. C. Lai, J. M. Tsai, C. C. Lin

Research output: Contribution to journalArticlepeer-review

22 Citations (Scopus)


GaN epitaxial layers and nitride-based multiquantum well light emitting diode (LED) structures with conventional single GaN buffer and GaN/SiN double buffers were prepared by metalorganic chemical vapor deposition. It was found that we could reduce defect density and thus improve crystal quality of the GaN epitaxial layers by using GaN/SiN double buffers. It was also found that we could use such a GaN/SiN double buffer to achieve more reliable nitride-based LEDs.

Original languageEnglish
Pages (from-to)2019-2022
Number of pages4
JournalSolid-State Electronics
Issue number11
Publication statusPublished - 2003 Nov

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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