Nitride-based cascade near white light-emitting diodes

C. H. Chen, Shoou-Jinn Chang, Y. K. Su, Jinn-Kong Sheu, Jone-Fang Chen, C. H. Kuo, Yu-Cheng Lin

Research output: Contribution to journalArticle

85 Citations (Scopus)

Abstract

An InGaN-GaN blue light-emitting diode (LED) structure and an InGaN-GaN green LED structure were grown sequentially onto the same sapphire substrate so as to achieve a nitride-based near white LED. In order to avoid thyristor effect, we choose a large 2.1 × 2.1 mm2 LED chip size, which was six times larger than that of the normal LED. It was found that we could observe a near white light emission with commission international de l'Eclairage color coordinates x = 0.2 and y = 0.3, when the injection current was lower than 200 mA. It was also found that the output power, luminous efficiency and color temperature of such a cascade near white LED were 4.2 mW, 81 lm/W, and 9000 K, respectively.

Original languageEnglish
Pages (from-to)908-910
Number of pages3
JournalIEEE Photonics Technology Letters
Volume14
Issue number7
DOIs
Publication statusPublished - 2002 Jul 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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