Nitride-based flip-chip ITO LEDs

S. J. Chang; C. S. Chang; Y. K. Su; C. T. Lee; W. S. Chen; C. F. Shen; Y. P. Hsu; S. C. Shei; H. M. Lo

doi:10.1109/TADVP.2005.846941

Nitride-based flip-chip ITO LEDs

S. J. Chang
, C. S. Chang
, Y. K. Su
, C. T. Lee
, W. S. Chen
, C. F. Shen
, Y. P. Hsu
, S. C. Shei
, H. M. Lo

Research output: Contribution to journal › Article › peer-review

87 Citations (Scopus)

Abstract

Nitride-based flip-chip indium-tin-oxide (ITO) light-emitting diodes (LEDs) were successfully fabricated. It was found that the forward voltage and the 20 mA output power of the flip-chip ITO LED were 3.32 V and 14.5 mW, respectively. Although the operation voltage of such a flip-chip ITO LED was slightly larger, it was found that its output power was much larger than those of conventional nonflip-chip LEDs. It was also found that flip-chip ITO LEDs were more reliable.

Original language	English
Pages (from-to)	273-277
Number of pages	5
Journal	IEEE Transactions on Advanced Packaging
Volume	28
Issue number	2
DOIs	https://doi.org/10.1109/TADVP.2005.846941
Publication status	Published - 2005 May

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1109/TADVP.2005.846941

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@article{08840b8f13c0495f9c695abaa96f9c6a,

title = "Nitride-based flip-chip ITO LEDs",

abstract = "Nitride-based flip-chip indium-tin-oxide (ITO) light-emitting diodes (LEDs) were successfully fabricated. It was found that the forward voltage and the 20 mA output power of the flip-chip ITO LED were 3.32 V and 14.5 mW, respectively. Although the operation voltage of such a flip-chip ITO LED was slightly larger, it was found that its output power was much larger than those of conventional nonflip-chip LEDs. It was also found that flip-chip ITO LEDs were more reliable.",

author = "Chang, \{S. J.\} and Chang, \{C. S.\} and Su, \{Y. K.\} and Lee, \{C. T.\} and Chen, \{W. S.\} and Shen, \{C. F.\} and Hsu, \{Y. P.\} and Shei, \{S. C.\} and Lo, \{H. M.\}",

note = "Funding Information: Manuscript received January 22, 2004; revised September 7, 2004. This work was supported by the National Science Council under Research Grants NSC 90-2215-E-008-043 and NSC 90-2112-M-008-046. S. J. Chang, C. S. Chang, Y. K. Su, C.-T. Lee, W. S. Chen, C. F. Shen, and Y. P. Hsu are with the Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan, 70101, Taiwan, R.O.C. S. C. Shei and H. M. Lo are with the South Epitaxy Corporation, Hsin-Shi 744, Taiwan, R.O.C. Digital Object Identifier 10.1109/TADVP.2005.846941 Fig. 1. Schematic diagrams of (a) conventional nitride-based LEDs and (b) flip-chip LEDs.",

year = "2005",

month = may,

doi = "10.1109/TADVP.2005.846941",

language = "English",

volume = "28",

pages = "273--277",

journal = "IEEE Transactions on Advanced Packaging",

issn = "1521-3323",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

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AU - Chang, S. J.

AU - Chang, C. S.

AU - Su, Y. K.

AU - Lee, C. T.

AU - Chen, W. S.

AU - Shen, C. F.

AU - Hsu, Y. P.

AU - Shei, S. C.

AU - Lo, H. M.

N1 - Funding Information: Manuscript received January 22, 2004; revised September 7, 2004. This work was supported by the National Science Council under Research Grants NSC 90-2215-E-008-043 and NSC 90-2112-M-008-046. S. J. Chang, C. S. Chang, Y. K. Su, C.-T. Lee, W. S. Chen, C. F. Shen, and Y. P. Hsu are with the Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan, 70101, Taiwan, R.O.C. S. C. Shei and H. M. Lo are with the South Epitaxy Corporation, Hsin-Shi 744, Taiwan, R.O.C. Digital Object Identifier 10.1109/TADVP.2005.846941 Fig. 1. Schematic diagrams of (a) conventional nitride-based LEDs and (b) flip-chip LEDs.

PY - 2005/5

Y1 - 2005/5

N2 - Nitride-based flip-chip indium-tin-oxide (ITO) light-emitting diodes (LEDs) were successfully fabricated. It was found that the forward voltage and the 20 mA output power of the flip-chip ITO LED were 3.32 V and 14.5 mW, respectively. Although the operation voltage of such a flip-chip ITO LED was slightly larger, it was found that its output power was much larger than those of conventional nonflip-chip LEDs. It was also found that flip-chip ITO LEDs were more reliable.

AB - Nitride-based flip-chip indium-tin-oxide (ITO) light-emitting diodes (LEDs) were successfully fabricated. It was found that the forward voltage and the 20 mA output power of the flip-chip ITO LED were 3.32 V and 14.5 mW, respectively. Although the operation voltage of such a flip-chip ITO LED was slightly larger, it was found that its output power was much larger than those of conventional nonflip-chip LEDs. It was also found that flip-chip ITO LEDs were more reliable.

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JO - IEEE Transactions on Advanced Packaging

JF - IEEE Transactions on Advanced Packaging

IS - 2

ER -

Nitride-based flip-chip ITO LEDs

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