Nitride-based flip-chip LEDs with transparent ohmic contacts and reflective mirrors

S. J. Chang; W. S. Chen; Y. C. Lin; C. S. Chang; T. K. Ko; Y. P. Hsu; C. F. Shen; J. M. Tsai; S. C. Shei

doi:10.1109/TADVP.2006.871189

Nitride-based flip-chip LEDs with transparent ohmic contacts and reflective mirrors

S. J. Chang
, W. S. Chen
, Y. C. Lin
, C. S. Chang
, T. K. Ko
, Y. P. Hsu
, C. F. Shen
, J. M. Tsai
, S. C. Shei

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

Nitride-based flip-chip light-emitting diodes (LEDs) with various transparent ohmic contacts and reflective mirrors were fabricated. At 470 nm, it was found that Ni could provide 92% transmittance while Ag could provide 92.4% reflectively. It was also found that the 20-mA forward voltages measured from LEDs with Ni+Ag, Ni+Al, and Ni+Pt were 3.15, 3.29, and 3.18 V while the output powers were 16, 13.3, and 11.6 mW, respectively. Furthermore, it was found that lifetimes of the fabricated flip-chip LEDs were good.

Original language	English
Pages (from-to)	403-408
Number of pages	6
Journal	IEEE Transactions on Advanced Packaging
Volume	29
Issue number	3
DOIs	https://doi.org/10.1109/TADVP.2006.871189
Publication status	Published - 2006 Aug

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1109/TADVP.2006.871189

Cite this

@article{3898774935d14560a9723ae14f1c8a94,

title = "Nitride-based flip-chip LEDs with transparent ohmic contacts and reflective mirrors",

abstract = "Nitride-based flip-chip light-emitting diodes (LEDs) with various transparent ohmic contacts and reflective mirrors were fabricated. At 470 nm, it was found that Ni could provide 92\% transmittance while Ag could provide 92.4\% reflectively. It was also found that the 20-mA forward voltages measured from LEDs with Ni+Ag, Ni+Al, and Ni+Pt were 3.15, 3.29, and 3.18 V while the output powers were 16, 13.3, and 11.6 mW, respectively. Furthermore, it was found that lifetimes of the fabricated flip-chip LEDs were good.",

author = "Chang, \{S. J.\} and Chen, \{W. S.\} and Lin, \{Y. C.\} and Chang, \{C. S.\} and Ko, \{T. K.\} and Hsu, \{Y. P.\} and Shen, \{C. F.\} and Tsai, \{J. M.\} and Shei, \{S. C.\}",

note = "Funding Information: Manuscript received May 19, 2005; revised November 29, 2005. This work was supported by the National Science Council under Grant NSC 90-2215-E-008-043 and Grant NSC 90-2112-M-008-046.",

year = "2006",

month = aug,

doi = "10.1109/TADVP.2006.871189",

language = "English",

volume = "29",

pages = "403--408",

journal = "IEEE Transactions on Advanced Packaging",

issn = "1521-3323",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

TY - JOUR

T1 - Nitride-based flip-chip LEDs with transparent ohmic contacts and reflective mirrors

AU - Chang, S. J.

AU - Chen, W. S.

AU - Lin, Y. C.

AU - Chang, C. S.

AU - Ko, T. K.

AU - Hsu, Y. P.

AU - Shen, C. F.

AU - Tsai, J. M.

AU - Shei, S. C.

N1 - Funding Information: Manuscript received May 19, 2005; revised November 29, 2005. This work was supported by the National Science Council under Grant NSC 90-2215-E-008-043 and Grant NSC 90-2112-M-008-046.

PY - 2006/8

Y1 - 2006/8

N2 - Nitride-based flip-chip light-emitting diodes (LEDs) with various transparent ohmic contacts and reflective mirrors were fabricated. At 470 nm, it was found that Ni could provide 92% transmittance while Ag could provide 92.4% reflectively. It was also found that the 20-mA forward voltages measured from LEDs with Ni+Ag, Ni+Al, and Ni+Pt were 3.15, 3.29, and 3.18 V while the output powers were 16, 13.3, and 11.6 mW, respectively. Furthermore, it was found that lifetimes of the fabricated flip-chip LEDs were good.

AB - Nitride-based flip-chip light-emitting diodes (LEDs) with various transparent ohmic contacts and reflective mirrors were fabricated. At 470 nm, it was found that Ni could provide 92% transmittance while Ag could provide 92.4% reflectively. It was also found that the 20-mA forward voltages measured from LEDs with Ni+Ag, Ni+Al, and Ni+Pt were 3.15, 3.29, and 3.18 V while the output powers were 16, 13.3, and 11.6 mW, respectively. Furthermore, it was found that lifetimes of the fabricated flip-chip LEDs were good.

UR - https://www.scopus.com/pages/publications/33747599183

UR - https://www.scopus.com/pages/publications/33747599183#tab=citedBy

U2 - 10.1109/TADVP.2006.871189

DO - 10.1109/TADVP.2006.871189

M3 - Article

AN - SCOPUS:33747599183

SN - 1521-3323

VL - 29

SP - 403

EP - 408

JO - IEEE Transactions on Advanced Packaging

JF - IEEE Transactions on Advanced Packaging

IS - 3

ER -

Nitride-based flip-chip LEDs with transparent ohmic contacts and reflective mirrors

Abstract

All Science Journal Classification (ASJC) codes

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