Nitride-based flip-chip p-i-n photodiodes

T. K. Ko, Shoou-Jinn Chang, Y. K. Su, Y. Z. Chiou, C. S. Chang, S. C. Shei, Jinn-Kong Sheu, Wei-Chi Lai, Yu-Cheng Lin, W. S. Chen, C. F. Shen

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


Nitride-based flip-chip p-i-n photodiodes were fabricated and characterized. It was found that we could achieve a small dark current of 5 × 10-10 A at -5 V and a large rejection ratio larger than three orders of magnitude. It was also found that the photodiodes only detect optical signals with wavelengths between 365 and 378 nm. Furthermore, it was found that peak responsivity occurs at around 370 nm with a value of 0.21 A/W at zero bias which corresponds to 70% external quantum efficiency.

Original languageEnglish
Pages (from-to)483-487
Number of pages5
JournalIEEE Transactions on Advanced Packaging
Issue number3
Publication statusPublished - 2006 Aug

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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