Nitride-based HFETs with carrier confinement layers

Y. K. Su, S. J. Chang, T. M. Kuan, C. H. Ko, J. B. Webb, W. H. Lan, Y. T. Cherng, S. C. Chen

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

Nitride-based Al0.24Ga0.76N/GaN heterostructure field effect transistors (HFETs) with carrier confinement layers were successfully fabricated. It was found that the source-drain (S-D) leakage currents of the HFETs with carrier confinement layers were much smaller. It was also found that we could enhance the two dimensional electron gas (2DEG) carrier mobility from 1070 to 1180cm2/V/s by the insertion of a Mg-doped semi-insulating carrier confinement layer with a Cp2Mg flow rate of 2.36×10-8mole/min. At the same time, we could also achieve a smoother sample surface. The dc and rf characteristics of these HFETs were also found to be good.

Original languageEnglish
Pages (from-to)172-176
Number of pages5
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume110
Issue number2
DOIs
Publication statusPublished - 2004 Jul 15

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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