Nitride-based HFETs with carrier confinement layers

Y. K. Su; S. J. Chang; T. M. Kuan; C. H. Ko; J. B. Webb; W. H. Lan; Y. T. Cherng; S. C. Chen

doi:10.1016/j.mseb.2004.02.015

Nitride-based HFETs with carrier confinement layers

Y. K. Su, S. J. Chang, T. M. Kuan, C. H. Ko, J. B. Webb, W. H. Lan, Y. T. Cherng, S. C. Chen

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Nitride-based Al_0.24Ga_0.76N/GaN heterostructure field effect transistors (HFETs) with carrier confinement layers were successfully fabricated. It was found that the source-drain (S-D) leakage currents of the HFETs with carrier confinement layers were much smaller. It was also found that we could enhance the two dimensional electron gas (2DEG) carrier mobility from 1070 to 1180cm²/V/s by the insertion of a Mg-doped semi-insulating carrier confinement layer with a Cp₂Mg flow rate of 2.36×10^-8mole/min. At the same time, we could also achieve a smoother sample surface. The dc and rf characteristics of these HFETs were also found to be good.

Original language	English
Pages (from-to)	172-176
Number of pages	5
Journal	Materials Science and Engineering: B
Volume	110
Issue number	2
DOIs	https://doi.org/10.1016/j.mseb.2004.02.015
Publication status	Published - 2004 Jul 15

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.mseb.2004.02.015

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@article{3ae4391555d646b0a851ce4690e7f338,

title = "Nitride-based HFETs with carrier confinement layers",

abstract = "Nitride-based Al0.24Ga0.76N/GaN heterostructure field effect transistors (HFETs) with carrier confinement layers were successfully fabricated. It was found that the source-drain (S-D) leakage currents of the HFETs with carrier confinement layers were much smaller. It was also found that we could enhance the two dimensional electron gas (2DEG) carrier mobility from 1070 to 1180cm2/V/s by the insertion of a Mg-doped semi-insulating carrier confinement layer with a Cp2Mg flow rate of 2.36×10-8mole/min. At the same time, we could also achieve a smoother sample surface. The dc and rf characteristics of these HFETs were also found to be good.",

author = "Su, {Y. K.} and Chang, {S. J.} and Kuan, {T. M.} and Ko, {C. H.} and Webb, {J. B.} and Lan, {W. H.} and Cherng, {Y. T.} and Chen, {S. C.}",

note = "Funding Information: This work is partially supported by National Science Council of the Republic of China under contract number NSC-88-2215-E-006-005. We also like to thank J. A. Bardwell and H. Tang for their technical assistance. ",

year = "2004",

month = jul,

day = "15",

doi = "10.1016/j.mseb.2004.02.015",

language = "English",

volume = "110",

pages = "172--176",

journal = "Materials Science and Engineering: B",

issn = "0921-5107",

publisher = "Elsevier BV",

number = "2",

}

TY - JOUR

T1 - Nitride-based HFETs with carrier confinement layers

AU - Su, Y. K.

AU - Chang, S. J.

AU - Kuan, T. M.

AU - Ko, C. H.

AU - Webb, J. B.

AU - Lan, W. H.

AU - Cherng, Y. T.

AU - Chen, S. C.

N1 - Funding Information: This work is partially supported by National Science Council of the Republic of China under contract number NSC-88-2215-E-006-005. We also like to thank J. A. Bardwell and H. Tang for their technical assistance.

PY - 2004/7/15

Y1 - 2004/7/15

N2 - Nitride-based Al0.24Ga0.76N/GaN heterostructure field effect transistors (HFETs) with carrier confinement layers were successfully fabricated. It was found that the source-drain (S-D) leakage currents of the HFETs with carrier confinement layers were much smaller. It was also found that we could enhance the two dimensional electron gas (2DEG) carrier mobility from 1070 to 1180cm2/V/s by the insertion of a Mg-doped semi-insulating carrier confinement layer with a Cp2Mg flow rate of 2.36×10-8mole/min. At the same time, we could also achieve a smoother sample surface. The dc and rf characteristics of these HFETs were also found to be good.

AB - Nitride-based Al0.24Ga0.76N/GaN heterostructure field effect transistors (HFETs) with carrier confinement layers were successfully fabricated. It was found that the source-drain (S-D) leakage currents of the HFETs with carrier confinement layers were much smaller. It was also found that we could enhance the two dimensional electron gas (2DEG) carrier mobility from 1070 to 1180cm2/V/s by the insertion of a Mg-doped semi-insulating carrier confinement layer with a Cp2Mg flow rate of 2.36×10-8mole/min. At the same time, we could also achieve a smoother sample surface. The dc and rf characteristics of these HFETs were also found to be good.

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U2 - 10.1016/j.mseb.2004.02.015

DO - 10.1016/j.mseb.2004.02.015

M3 - Article

AN - SCOPUS:2442693168

SN - 0921-5107

VL - 110

SP - 172

EP - 176

JO - Materials Science and Engineering: B

JF - Materials Science and Engineering: B

IS - 2

ER -

Nitride-based HFETs with carrier confinement layers

Abstract

All Science Journal Classification (ASJC) codes

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