Nitride-based high-power flip-chip LED with double-side patterned sapphire substrate

C. F. Shen, S. J. Chang, W. S. Chen, T. K. Ko, C. T. Kuo, S. C. Shei

Research output: Contribution to journalArticle

76 Citations (Scopus)

Abstract

A nitride-based high-power flip-chip (FC) light-emitting diode (LED) with a double-side patterned sapphire substrate (PSS) was proposed and realized. Under 350-mA current injection, it was found that forward voltages were 3.24, 3.26, and 3.25 V for the conventional FC LED, FC LED prepared on PSS, and FC LED with double-side PSS, respectively. It was found that the 350-mA LED output powers were 79.3, 98.1, and 121.5 mW for the conventional FC LED, FC LED prepared on PSS, and FC LED with double-side PSS, respectively. In other words, we can enhance the electroluminescence intensity by 53% without increasing operation voltage of the fabricated LED.

Original languageEnglish
Pages (from-to)780-782
Number of pages3
JournalIEEE Photonics Technology Letters
Volume19
Issue number10
DOIs
Publication statusPublished - 2007 May 15

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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