Nitride-based high power flip-chip near-UV LEDs with reflective submount

C. F. Shen, S. J. Chang, T. K. Ko, S. C. Shei, W. C. Lai, C. S. Chang, W. S. Chen, S. P. Huang, Y. W. Ku, R. H. Horng

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Abstract

Nitride-based high power flip-chip near-ultraviolet (UV) light emitting diodes (LEDs) with a reflective mirror are fabricated by depositing Al onto a Si submount. It is demonstrated that the Al layer coated onto a Si submount can effectively reflect downward emitting photons for flip-chip LEDs. Although the operation voltage of the proposed LEDs is slightly increased, it is found that the output power is at least 30 higher than that of conventional LEDs. It is also found that flip-chip near-UV LEDs are more reliable than conventional non-flip-chip LEDs.

Original languageEnglish
Pages (from-to)27-30
Number of pages4
JournalIET Optoelectronics
Volume1
Issue number1
DOIs
Publication statusPublished - 2007 Sep 11

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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    Shen, C. F., Chang, S. J., Ko, T. K., Shei, S. C., Lai, W. C., Chang, C. S., Chen, W. S., Huang, S. P., Ku, Y. W., & Horng, R. H. (2007). Nitride-based high power flip-chip near-UV LEDs with reflective submount. IET Optoelectronics, 1(1), 27-30. https://doi.org/10.1049/iet-opt:20060003