Nitride-based LEDs with 800°C grown p-AlInGaN-GaN double-cap layers

S. J. Chang, L. W. Wu, Y. K. Su, Y. P. Hsu, W. C. Lai, J. M. Tsai, J. K. Sheu, C. T. Lee

Research output: Contribution to journalArticlepeer-review

102 Citations (Scopus)

Abstract

GaN-based light-emitting diodes (LEDs) with various p-cap layers were prepared. It was found that surface morphologies of the LEDs with 800°C grown cap layers were rough due to the low lateral growth rate of GaN. It was also found that 20-mA forward voltage of the LED with 800°C grown p-AlInGaN-GaN double-cap layer was only 3.05 V. Furthermore, it was found that we could achieve a high output power and a long lifetime by using the 800°C grown p-AlInGaN-GaN double-cap layer.

Original languageEnglish
Pages (from-to)1447-1449
Number of pages3
JournalIEEE Photonics Technology Letters
Volume16
Issue number6
DOIs
Publication statusPublished - 2004 Jun

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Nitride-based LEDs with 800°C grown p-AlInGaN-GaN double-cap layers'. Together they form a unique fingerprint.

Cite this