Nitride-based LEDs with an insulating SiO2 layer underneath p-pad electrodes

S. J. Chang, C. F. Shen, W. S. Chen, T. K. Ko, C. T. Kuo, K. H. Yu, S. C. Shei, Y. Z. Chiou

Research output: Contribution to journalArticle

29 Citations (Scopus)


We proposed a simple method to reduce the current crowding effect of nitride-based light emitting diodes (LEDs) without extra dry etching and refill. It was found that we can achieve much better current spreading by inserting an insulating Si O2 layer between the epitaxial layer and the p-pad electrode. It was also found that we can enhance light output intensity by 22%. Furthermore, it was found that 20 mA forward voltage only increased slightly from 3.32 to 3.37 V with the insertion of the Si O2 layer. The reliability of the proposed LED is also good.

Original languageEnglish
Pages (from-to)175-177
Number of pages3
JournalElectrochemical and Solid-State Letters
Issue number6
Publication statusPublished - 2007 Apr 13


All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

Chang, S. J., Shen, C. F., Chen, W. S., Ko, T. K., Kuo, C. T., Yu, K. H., Shei, S. C., & Chiou, Y. Z. (2007). Nitride-based LEDs with an insulating SiO2 layer underneath p-pad electrodes. Electrochemical and Solid-State Letters, 10(6), 175-177.