Nitride-based LEDs with modulation-doped Al0.12Ga0.88N-GaN superlattice structures

T. C. Wen; S. J. Chang; C. T. Lee; W. C. Lai; J. K. Sheu

doi:10.1109/TED.2004.835985

Nitride-based LEDs with modulation-doped Al_0.12Ga_0.88N-GaN superlattice structures

T. C. Wen, S. J. Chang, C. T. Lee, W. C. Lai, J. K. Sheu

Research output: Contribution to journal › Article › peer-review

40 Citations (Scopus)

Abstract

Modulation doped Al_0.12Ga_0.88N-GaN superlattice structures were used to spread pulse current in nitride-based light emitting diodes (LEDs). Although the 20-mA electroluminescence (EL) intensity of the LEDs with modulation-doped AlGaN-GaN superlattice structures was found to be 10% smaller than that of the conventional LEDs, it was found that LEDs with the AlGaN-GaN superlattice structures could all endure a 2000-V reverse electrostatic discharge (ESD) pulse voltage. Some LEDs can even survive with an 8000-V reverse ESD pulse voltage, which is equivalent to "Class 3B" of Human Body Mode testing.

Original language	English
Pages (from-to)	1743-1746
Number of pages	4
Journal	IEEE Transactions on Electron Devices
Volume	51
Issue number	10
DOIs	https://doi.org/10.1109/TED.2004.835985
Publication status	Published - 2004 Oct

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/TED.2004.835985

Cite this

@article{7cf2b32453d14c4a837317ca5772f1a6,

title = "Nitride-based LEDs with modulation-doped Al0.12Ga0.88N-GaN superlattice structures",

abstract = "Modulation doped Al0.12Ga0.88N-GaN superlattice structures were used to spread pulse current in nitride-based light emitting diodes (LEDs). Although the 20-mA electroluminescence (EL) intensity of the LEDs with modulation-doped AlGaN-GaN superlattice structures was found to be 10% smaller than that of the conventional LEDs, it was found that LEDs with the AlGaN-GaN superlattice structures could all endure a 2000-V reverse electrostatic discharge (ESD) pulse voltage. Some LEDs can even survive with an 8000-V reverse ESD pulse voltage, which is equivalent to {"}Class 3B{"} of Human Body Mode testing.",

author = "Wen, {T. C.} and Chang, {S. J.} and Lee, {C. T.} and Lai, {W. C.} and Sheu, {J. K.}",

year = "2004",

month = oct,

doi = "10.1109/TED.2004.835985",

language = "English",

volume = "51",

pages = "1743--1746",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "10",

}

TY - JOUR

T1 - Nitride-based LEDs with modulation-doped Al0.12Ga0.88N-GaN superlattice structures

AU - Wen, T. C.

AU - Chang, S. J.

AU - Lee, C. T.

AU - Lai, W. C.

AU - Sheu, J. K.

PY - 2004/10

Y1 - 2004/10

N2 - Modulation doped Al0.12Ga0.88N-GaN superlattice structures were used to spread pulse current in nitride-based light emitting diodes (LEDs). Although the 20-mA electroluminescence (EL) intensity of the LEDs with modulation-doped AlGaN-GaN superlattice structures was found to be 10% smaller than that of the conventional LEDs, it was found that LEDs with the AlGaN-GaN superlattice structures could all endure a 2000-V reverse electrostatic discharge (ESD) pulse voltage. Some LEDs can even survive with an 8000-V reverse ESD pulse voltage, which is equivalent to "Class 3B" of Human Body Mode testing.

AB - Modulation doped Al0.12Ga0.88N-GaN superlattice structures were used to spread pulse current in nitride-based light emitting diodes (LEDs). Although the 20-mA electroluminescence (EL) intensity of the LEDs with modulation-doped AlGaN-GaN superlattice structures was found to be 10% smaller than that of the conventional LEDs, it was found that LEDs with the AlGaN-GaN superlattice structures could all endure a 2000-V reverse electrostatic discharge (ESD) pulse voltage. Some LEDs can even survive with an 8000-V reverse ESD pulse voltage, which is equivalent to "Class 3B" of Human Body Mode testing.

UR - http://www.scopus.com/inward/record.url?scp=5444258137&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=5444258137&partnerID=8YFLogxK

U2 - 10.1109/TED.2004.835985

DO - 10.1109/TED.2004.835985

M3 - Article

AN - SCOPUS:5444258137

SN - 0018-9383

VL - 51

SP - 1743

EP - 1746

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 10

ER -

Nitride-based LEDs with modulation-doped Al_0.12Ga_0.88N-GaN superlattice structures

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this