Nitride-based LEDs with MQW active regions grown by different temperature profiles

Shoou Jinn Chang, S. C. Wei, Y. K. Su, R. W. Chuang, S. M. Chen, W. L. Li

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)


Nitride-based light-emitting diodes (LEDs) with multiple quantum-well active regions were separately prepared by metal-organic vapor phase epitaxy in different temperature profiles. Compared with conventional samples, the reduced reverse leakage current and improved electrostatic discharge characteristics of the LEDs can both be achieved using temperature ramping and temperature cycling methods. However, using the temperature ramping may degrade the optical properties of devices due to desorption of In atoms and/or impurity incorporation. With an emission wavelength of 465 nm, the 20-mA output powers measured were 5.5, 6.0, and 7.9 mW for temperature ramping LED, conventional LED, and temperature cycling LED, respectively.

Original languageEnglish
Pages (from-to)1806-1808
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number9
Publication statusPublished - 2005 Sep

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


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