Nitride-based LEDs with n--GaN current spreading layers

Y. K. Su, Shoou-Jinn Chang, S. C. Wei, Wen-Kuei Chuang, S. M. Chen, W. L. Li

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

Nitride-based light-emitting diodes (LEDs) with n--GaN current spreading layers were proposed and fabricated. With a 0.1-μm-thick n--GaN current spreading layer, it was found that the output power could be enhanced by 35% without increasing the operation voltage of the LEDs at 20 mA. In addition, implementing the n--GaN current spreading layer also significantly improved the electrostatic discharge characteristics of nitride-based LEDs.

Original languageEnglish
Pages (from-to)891-893
Number of pages3
JournalIEEE Electron Device Letters
Volume26
Issue number12
DOIs
Publication statusPublished - 2005 Dec 1

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Nitrides
Light emitting diodes
Electrostatic discharge
Electric potential

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Su, Y. K. ; Chang, Shoou-Jinn ; Wei, S. C. ; Chuang, Wen-Kuei ; Chen, S. M. ; Li, W. L. / Nitride-based LEDs with n--GaN current spreading layers. In: IEEE Electron Device Letters. 2005 ; Vol. 26, No. 12. pp. 891-893.
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Nitride-based LEDs with n--GaN current spreading layers. / Su, Y. K.; Chang, Shoou-Jinn; Wei, S. C.; Chuang, Wen-Kuei; Chen, S. M.; Li, W. L.

In: IEEE Electron Device Letters, Vol. 26, No. 12, 01.12.2005, p. 891-893.

Research output: Contribution to journalArticle

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AU - Chen, S. M.

AU - Li, W. L.

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