Nitride-based LEDs with n--GaN current spreading layers

Y. K. Su; S. J. Chang; S. C. Wei; R. W. Chuang; S. M. Chen; W. L. Li

doi:10.1109/LED.2005.859647

Nitride-based LEDs with n^--GaN current spreading layers

Y. K. Su, S. J. Chang, S. C. Wei, R. W. Chuang, S. M. Chen, W. L. Li

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

Nitride-based light-emitting diodes (LEDs) with n^--GaN current spreading layers were proposed and fabricated. With a 0.1-μm-thick n^--GaN current spreading layer, it was found that the output power could be enhanced by 35% without increasing the operation voltage of the LEDs at 20 mA. In addition, implementing the n^--GaN current spreading layer also significantly improved the electrostatic discharge characteristics of nitride-based LEDs.

Original language	English
Pages (from-to)	891-893
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	26
Issue number	12
DOIs	https://doi.org/10.1109/LED.2005.859647
Publication status	Published - 2005 Dec

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2005.859647

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@article{9d44072192d8468cab29946554601012,

title = "Nitride-based LEDs with n--GaN current spreading layers",

abstract = "Nitride-based light-emitting diodes (LEDs) with n--GaN current spreading layers were proposed and fabricated. With a 0.1-μm-thick n--GaN current spreading layer, it was found that the output power could be enhanced by 35% without increasing the operation voltage of the LEDs at 20 mA. In addition, implementing the n--GaN current spreading layer also significantly improved the electrostatic discharge characteristics of nitride-based LEDs.",

author = "Su, {Y. K.} and Chang, {S. J.} and Wei, {S. C.} and Chuang, {R. W.} and Chen, {S. M.} and Li, {W. L.}",

note = "Funding Information: Manuscript received July 22, 2005; revised September 13, 2005. This work was supported by the National Science Council under Contract NSC91-2215-E006-012. The review of this letter was arranged by Editor P. Yu.",

year = "2005",

month = dec,

doi = "10.1109/LED.2005.859647",

language = "English",

volume = "26",

pages = "891--893",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

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TY - JOUR

T1 - Nitride-based LEDs with n--GaN current spreading layers

AU - Su, Y. K.

AU - Chang, S. J.

AU - Wei, S. C.

AU - Chuang, R. W.

AU - Chen, S. M.

AU - Li, W. L.

N1 - Funding Information: Manuscript received July 22, 2005; revised September 13, 2005. This work was supported by the National Science Council under Contract NSC91-2215-E006-012. The review of this letter was arranged by Editor P. Yu.

PY - 2005/12

Y1 - 2005/12

N2 - Nitride-based light-emitting diodes (LEDs) with n--GaN current spreading layers were proposed and fabricated. With a 0.1-μm-thick n--GaN current spreading layer, it was found that the output power could be enhanced by 35% without increasing the operation voltage of the LEDs at 20 mA. In addition, implementing the n--GaN current spreading layer also significantly improved the electrostatic discharge characteristics of nitride-based LEDs.

AB - Nitride-based light-emitting diodes (LEDs) with n--GaN current spreading layers were proposed and fabricated. With a 0.1-μm-thick n--GaN current spreading layer, it was found that the output power could be enhanced by 35% without increasing the operation voltage of the LEDs at 20 mA. In addition, implementing the n--GaN current spreading layer also significantly improved the electrostatic discharge characteristics of nitride-based LEDs.

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EP - 893

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 12

ER -

Nitride-based LEDs with n^--GaN current spreading layers

Abstract

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