Nitride-based LEDs with oblique sidewalls and a light guiding structure

D. S. Kuo, S. J. Chang, C. F. Shen, T. C. Ko, T. K. Ko, S. J. Hon

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

The authors propose a simple method to further improve light extraction efficiency of GaN-based phosphoric acid etched light-emitting diodes (LED) by forming a light guiding structure on a sapphire substrate. Compared with conventional LEDs, it was found that the output intensity of the phosphoric acid etched LEDs with a light guiding structure was 40% higher. It was also found that the light guiding structure can effectively enhance LED output intensity in the vertical directions.

Original languageEnglish
Article number055010
JournalSemiconductor Science and Technology
Volume25
Issue number5
DOIs
Publication statusPublished - 2010

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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