Nitride-based LEDs with oblique sidewalls and a light guiding structure

D. S. Kuo, S. J. Chang, C. F. Shen, T. C. Ko, T. K. Ko, S. J. Hon

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


The authors propose a simple method to further improve light extraction efficiency of GaN-based phosphoric acid etched light-emitting diodes (LED) by forming a light guiding structure on a sapphire substrate. Compared with conventional LEDs, it was found that the output intensity of the phosphoric acid etched LEDs with a light guiding structure was 40% higher. It was also found that the light guiding structure can effectively enhance LED output intensity in the vertical directions.

Original languageEnglish
Article number055010
JournalSemiconductor Science and Technology
Issue number5
Publication statusPublished - 2010

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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