Nitride-based LEDs with oblique sidewalls and a light guiding structure

D. S. Kuo; S. J. Chang; C. F. Shen; T. C. Ko; T. K. Ko; S. J. Hon

doi:10.1088/0268-1242/25/5/055010

Nitride-based LEDs with oblique sidewalls and a light guiding structure

D. S. Kuo, S. J. Chang, C. F. Shen, T. C. Ko, T. K. Ko, S. J. Hon

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The authors propose a simple method to further improve light extraction efficiency of GaN-based phosphoric acid etched light-emitting diodes (LED) by forming a light guiding structure on a sapphire substrate. Compared with conventional LEDs, it was found that the output intensity of the phosphoric acid etched LEDs with a light guiding structure was 40% higher. It was also found that the light guiding structure can effectively enhance LED output intensity in the vertical directions.

Original language	English
Article number	055010
Journal	Semiconductor Science and Technology
Volume	25
Issue number	5
DOIs	https://doi.org/10.1088/0268-1242/25/5/055010
Publication status	Published - 2010

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/25/5/055010

Cite this

@article{905d62a3a0924ed292ca8b12f03125ad,

title = "Nitride-based LEDs with oblique sidewalls and a light guiding structure",

abstract = "The authors propose a simple method to further improve light extraction efficiency of GaN-based phosphoric acid etched light-emitting diodes (LED) by forming a light guiding structure on a sapphire substrate. Compared with conventional LEDs, it was found that the output intensity of the phosphoric acid etched LEDs with a light guiding structure was 40% higher. It was also found that the light guiding structure can effectively enhance LED output intensity in the vertical directions.",

author = "Kuo, {D. S.} and Chang, {S. J.} and Shen, {C. F.} and Ko, {T. C.} and Ko, {T. K.} and Hon, {S. J.}",

year = "2010",

doi = "10.1088/0268-1242/25/5/055010",

language = "English",

volume = "25",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing Ltd.",

number = "5",

}

TY - JOUR

T1 - Nitride-based LEDs with oblique sidewalls and a light guiding structure

AU - Kuo, D. S.

AU - Chang, S. J.

AU - Shen, C. F.

AU - Ko, T. C.

AU - Ko, T. K.

AU - Hon, S. J.

PY - 2010

Y1 - 2010

N2 - The authors propose a simple method to further improve light extraction efficiency of GaN-based phosphoric acid etched light-emitting diodes (LED) by forming a light guiding structure on a sapphire substrate. Compared with conventional LEDs, it was found that the output intensity of the phosphoric acid etched LEDs with a light guiding structure was 40% higher. It was also found that the light guiding structure can effectively enhance LED output intensity in the vertical directions.

AB - The authors propose a simple method to further improve light extraction efficiency of GaN-based phosphoric acid etched light-emitting diodes (LED) by forming a light guiding structure on a sapphire substrate. Compared with conventional LEDs, it was found that the output intensity of the phosphoric acid etched LEDs with a light guiding structure was 40% higher. It was also found that the light guiding structure can effectively enhance LED output intensity in the vertical directions.

UR - http://www.scopus.com/inward/record.url?scp=77951239458&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77951239458&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/25/5/055010

DO - 10.1088/0268-1242/25/5/055010

M3 - Article

AN - SCOPUS:77951239458

VL - 25

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 5

M1 - 055010

ER -

Nitride-based LEDs with oblique sidewalls and a light guiding structure

Abstract

All Science Journal Classification (ASJC) codes

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