Nitride-Based LEDs with p-InGaN Capping Layer

S. J. Chang; C. H. Chen; P. C. Chang; Y. K. Su; P. C. Chen; Y. D. Jhou; H. Hung; S. M. Wang; B. R. Huang

doi:10.1109/TED.2003.820131

Nitride-Based LEDs with p-InGaN Capping Layer

S. J. Chang, C. H. Chen, P. C. Chang, Y. K. Su, P. C. Chen, Y. D. Jhou, H. Hung, S. M. Wang, B. R. Huang

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

56 Citations (Scopus)

Abstract

Nitride-based light-emitting diodes (LEDs) with Mg-doped In _0.23Ga_0.77N capping layers were successfully fabricated. Compared to Mg-doped GaN layers, it was found that we could achieve a much larger hole concentration from Mg-doped In_0.23Ga_0.77N layers. It was also found that we could reduce the 20 mA operation voltage from 3.78 to 3.37 V by introducing a 5-nm-thick In _0.23Ga_0.77N layer on top of the p-GaN layer. Furthermore, it was found that output intensity of LEDs with In_0.23Ga_0.77N capping layer was much larger, particularly at elevated temperatures.

Original language	English
Pages (from-to)	2567-2570
Number of pages	4
Journal	IEEE Transactions on Electron Devices
Volume	50
Issue number	12
DOIs	https://doi.org/10.1109/TED.2003.820131
Publication status	Published - 2003 Dec

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2003.820131

Cite this

@article{e5fb9ea2c34b477f810c2a09391bb759,

title = "Nitride-Based LEDs with p-InGaN Capping Layer",

abstract = "Nitride-based light-emitting diodes (LEDs) with Mg-doped In 0.23Ga0.77N capping layers were successfully fabricated. Compared to Mg-doped GaN layers, it was found that we could achieve a much larger hole concentration from Mg-doped In0.23Ga0.77N layers. It was also found that we could reduce the 20 mA operation voltage from 3.78 to 3.37 V by introducing a 5-nm-thick In 0.23Ga0.77N layer on top of the p-GaN layer. Furthermore, it was found that output intensity of LEDs with In0.23Ga0.77N capping layer was much larger, particularly at elevated temperatures.",

author = "Chang, {S. J.} and Chen, {C. H.} and Chang, {P. C.} and Su, {Y. K.} and Chen, {P. C.} and Jhou, {Y. D.} and H. Hung and Wang, {S. M.} and Huang, {B. R.}",

year = "2003",

month = dec,

doi = "10.1109/TED.2003.820131",

language = "English",

volume = "50",

pages = "2567--2570",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}

TY - JOUR

T1 - Nitride-Based LEDs with p-InGaN Capping Layer

AU - Chang, S. J.

AU - Chen, C. H.

AU - Chang, P. C.

AU - Su, Y. K.

AU - Chen, P. C.

AU - Jhou, Y. D.

AU - Hung, H.

AU - Wang, S. M.

AU - Huang, B. R.

PY - 2003/12

Y1 - 2003/12

N2 - Nitride-based light-emitting diodes (LEDs) with Mg-doped In 0.23Ga0.77N capping layers were successfully fabricated. Compared to Mg-doped GaN layers, it was found that we could achieve a much larger hole concentration from Mg-doped In0.23Ga0.77N layers. It was also found that we could reduce the 20 mA operation voltage from 3.78 to 3.37 V by introducing a 5-nm-thick In 0.23Ga0.77N layer on top of the p-GaN layer. Furthermore, it was found that output intensity of LEDs with In0.23Ga0.77N capping layer was much larger, particularly at elevated temperatures.

AB - Nitride-based light-emitting diodes (LEDs) with Mg-doped In 0.23Ga0.77N capping layers were successfully fabricated. Compared to Mg-doped GaN layers, it was found that we could achieve a much larger hole concentration from Mg-doped In0.23Ga0.77N layers. It was also found that we could reduce the 20 mA operation voltage from 3.78 to 3.37 V by introducing a 5-nm-thick In 0.23Ga0.77N layer on top of the p-GaN layer. Furthermore, it was found that output intensity of LEDs with In0.23Ga0.77N capping layer was much larger, particularly at elevated temperatures.

UR - http://www.scopus.com/inward/record.url?scp=0347968279&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0347968279&partnerID=8YFLogxK

U2 - 10.1109/TED.2003.820131

DO - 10.1109/TED.2003.820131

M3 - Article

AN - SCOPUS:0347968279

SN - 0018-9383

VL - 50

SP - 2567

EP - 2570

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 12

ER -

Nitride-Based LEDs with p-InGaN Capping Layer

Abstract

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