Nitride-Based LEDs with p-InGaN Capping Layer

S. J. Chang, C. H. Chen, P. C. Chang, Y. K. Su, P. C. Chen, Y. D. Jhou, H. Hung, S. M. Wang, B. R. Huang

Research output: Contribution to journalArticlepeer-review

55 Citations (Scopus)

Abstract

Nitride-based light-emitting diodes (LEDs) with Mg-doped In 0.23Ga0.77N capping layers were successfully fabricated. Compared to Mg-doped GaN layers, it was found that we could achieve a much larger hole concentration from Mg-doped In0.23Ga0.77N layers. It was also found that we could reduce the 20 mA operation voltage from 3.78 to 3.37 V by introducing a 5-nm-thick In 0.23Ga0.77N layer on top of the p-GaN layer. Furthermore, it was found that output intensity of LEDs with In0.23Ga0.77N capping layer was much larger, particularly at elevated temperatures.

Original languageEnglish
Pages (from-to)2567-2570
Number of pages4
JournalIEEE Transactions on Electron Devices
Volume50
Issue number12
DOIs
Publication statusPublished - 2003 Dec 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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