Nitride-based LEDs with phosphoric acid etched undercut sidewalls

D. S. Kuo, Shoou Jinn Chang, T. K. Ko, C. F. Shen, S. J. Hon, S. C. Hung

Research output: Contribution to journalArticlepeer-review

24 Citations (Scopus)

Abstract

We propose a simple defect-selective wet etching method to form oblique sidewalls for GaN-based epitaxial layers with phosphoric acid. Using the same defect-selective wet etching, we also prepared GaN-based light-emitting diodes (LEDs) with undercut sidewalls. Compared with conventional LEDs with vertical sidewalls, it was found that output intensity of the LEDs prepared by defect-selective wet etching was 30% higher.

Original languageEnglish
Pages (from-to)510-512
Number of pages3
JournalIEEE Photonics Technology Letters
Volume21
Issue number8
DOIs
Publication statusPublished - 2009 Apr 15

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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