Nitride-based light emitting diodes with indium tin oxide electrode patterned by imprint lithography

S. J. Chang; C. F. Shen; W. S. Chen; C. T. Kuo; T. K. Ko; S. C. Shei; J. K. Sheu

doi:10.1063/1.2753726

Nitride-based light emitting diodes with indium tin oxide electrode patterned by imprint lithography

S. J. Chang, C. F. Shen, W. S. Chen, C. T. Kuo, T. K. Ko, S. C. Shei, J. K. Sheu

Research output: Contribution to journal › Article › peer-review

82 Citations (Scopus)

Abstract

The authors propose a simple, low cost, and mass producible imprint lithography method to texture indium tin oxide (ITO) contact layer of nitride-based light emitting diodes (LEDs). Under 20 mA current injection, it was found that forward voltages were 3.24, 3.25, and 3.24 V while the LED output powers were 11.7, 12.6, and 13.3 mW for the conventional ITO LED, ITO LED patterned with 1.75 μm holes, and ITO LED patterned with 0.85 μm holes, respectively.

Original language	English
Article number	013504
Journal	Applied Physics Letters
Volume	91
Issue number	1
DOIs	https://doi.org/10.1063/1.2753726
Publication status	Published - 2007

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2753726

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abstract = "The authors propose a simple, low cost, and mass producible imprint lithography method to texture indium tin oxide (ITO) contact layer of nitride-based light emitting diodes (LEDs). Under 20 mA current injection, it was found that forward voltages were 3.24, 3.25, and 3.24 V while the LED output powers were 11.7, 12.6, and 13.3 mW for the conventional ITO LED, ITO LED patterned with 1.75 μm holes, and ITO LED patterned with 0.85 μm holes, respectively.",

author = "Chang, {S. J.} and Shen, {C. F.} and Chen, {W. S.} and Kuo, {C. T.} and Ko, {T. K.} and Shei, {S. C.} and Sheu, {J. K.}",

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AU - Chang, S. J.

AU - Shen, C. F.

AU - Chen, W. S.

AU - Kuo, C. T.

AU - Ko, T. K.

AU - Shei, S. C.

AU - Sheu, J. K.

PY - 2007

Y1 - 2007

N2 - The authors propose a simple, low cost, and mass producible imprint lithography method to texture indium tin oxide (ITO) contact layer of nitride-based light emitting diodes (LEDs). Under 20 mA current injection, it was found that forward voltages were 3.24, 3.25, and 3.24 V while the LED output powers were 11.7, 12.6, and 13.3 mW for the conventional ITO LED, ITO LED patterned with 1.75 μm holes, and ITO LED patterned with 0.85 μm holes, respectively.

AB - The authors propose a simple, low cost, and mass producible imprint lithography method to texture indium tin oxide (ITO) contact layer of nitride-based light emitting diodes (LEDs). Under 20 mA current injection, it was found that forward voltages were 3.24, 3.25, and 3.24 V while the LED output powers were 11.7, 12.6, and 13.3 mW for the conventional ITO LED, ITO LED patterned with 1.75 μm holes, and ITO LED patterned with 0.85 μm holes, respectively.

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JF - Applied Physics Letters

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Nitride-based light emitting diodes with indium tin oxide electrode patterned by imprint lithography

Abstract

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