Nitride-based light-emitting diodes with InGaN/GaN SAQD active layers

L. W. Ji, Y. K. Su, S. J. Chang, S. C. Hung, C. S. Chang, L. W. Wu

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

InGaN/GaN blue light-emitting diodes (LEDs) with self-assembled quantum dot (SAQD) active layers were successfully fabricated using an interrupted growth method in metal-organic chemical vapour deposition (MOCVD). Nanoscale QDs have been formed successfully embedded in quantum wells (QWs) with a typical 3 nm height and 10nm lateral dimension. A huge 68.4 meV blue shift in electroluminescence (EL) peak position was found as the injection current was increased from 3 to 50 mA for the SAQD LED. The large EL blue shift reveals that deep localisation of exitons (or carriers) originating from QDs strengthens the band-filling effect as the injection current increases.

Original languageEnglish
Pages (from-to)486-488
Number of pages3
JournalIEE Proceedings: Circuits, Devices and Systems
Volume151
Issue number5
DOIs
Publication statusPublished - 2004 Oct

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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