Nitride-based light-emitting diodes with InGaN/GaN SAQD active layers

L. W. Ji; Y. K. Su; S. J. Chang; S. C. Hung; C. S. Chang; L. W. Wu

doi:10.1049/ip-cds:20040997

Nitride-based light-emitting diodes with InGaN/GaN SAQD active layers

L. W. Ji, Y. K. Su, S. J. Chang, S. C. Hung, C. S. Chang, L. W. Wu

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

InGaN/GaN blue light-emitting diodes (LEDs) with self-assembled quantum dot (SAQD) active layers were successfully fabricated using an interrupted growth method in metal-organic chemical vapour deposition (MOCVD). Nanoscale QDs have been formed successfully embedded in quantum wells (QWs) with a typical 3 nm height and 10nm lateral dimension. A huge 68.4 meV blue shift in electroluminescence (EL) peak position was found as the injection current was increased from 3 to 50 mA for the SAQD LED. The large EL blue shift reveals that deep localisation of exitons (or carriers) originating from QDs strengthens the band-filling effect as the injection current increases.

Original language	English
Pages (from-to)	486-488
Number of pages	3
Journal	IEE Proceedings: Circuits, Devices and Systems
Volume	151
Issue number	5
DOIs	https://doi.org/10.1049/ip-cds:20040997
Publication status	Published - 2004 Oct

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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title = "Nitride-based light-emitting diodes with InGaN/GaN SAQD active layers",

abstract = "InGaN/GaN blue light-emitting diodes (LEDs) with self-assembled quantum dot (SAQD) active layers were successfully fabricated using an interrupted growth method in metal-organic chemical vapour deposition (MOCVD). Nanoscale QDs have been formed successfully embedded in quantum wells (QWs) with a typical 3 nm height and 10nm lateral dimension. A huge 68.4 meV blue shift in electroluminescence (EL) peak position was found as the injection current was increased from 3 to 50 mA for the SAQD LED. The large EL blue shift reveals that deep localisation of exitons (or carriers) originating from QDs strengthens the band-filling effect as the injection current increases.",

author = "Ji, {L. W.} and Su, {Y. K.} and Chang, {S. J.} and Hung, {S. C.} and Chang, {C. S.} and Wu, {L. W.}",

year = "2004",

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T1 - Nitride-based light-emitting diodes with InGaN/GaN SAQD active layers

AU - Ji, L. W.

AU - Su, Y. K.

AU - Chang, S. J.

AU - Hung, S. C.

AU - Chang, C. S.

AU - Wu, L. W.

PY - 2004/10

Y1 - 2004/10

N2 - InGaN/GaN blue light-emitting diodes (LEDs) with self-assembled quantum dot (SAQD) active layers were successfully fabricated using an interrupted growth method in metal-organic chemical vapour deposition (MOCVD). Nanoscale QDs have been formed successfully embedded in quantum wells (QWs) with a typical 3 nm height and 10nm lateral dimension. A huge 68.4 meV blue shift in electroluminescence (EL) peak position was found as the injection current was increased from 3 to 50 mA for the SAQD LED. The large EL blue shift reveals that deep localisation of exitons (or carriers) originating from QDs strengthens the band-filling effect as the injection current increases.

AB - InGaN/GaN blue light-emitting diodes (LEDs) with self-assembled quantum dot (SAQD) active layers were successfully fabricated using an interrupted growth method in metal-organic chemical vapour deposition (MOCVD). Nanoscale QDs have been formed successfully embedded in quantum wells (QWs) with a typical 3 nm height and 10nm lateral dimension. A huge 68.4 meV blue shift in electroluminescence (EL) peak position was found as the injection current was increased from 3 to 50 mA for the SAQD LED. The large EL blue shift reveals that deep localisation of exitons (or carriers) originating from QDs strengthens the band-filling effect as the injection current increases.

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Nitride-based light-emitting diodes with InGaN/GaN SAQD active layers

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