Nitride-based light-emitting diodes with Ni/ITO p-type ohmic contacts

Yu-Cheng Lin, Shoou-Jinn Chang, Y. K. Su, T. Y. Tsai, C. S. Chang, S. C. Shei, S. J. Hsu, C. H. Liu, U. H. Liaw, S. C. Chen, B. R. Huang

Research output: Contribution to journalArticlepeer-review

81 Citations (Scopus)


The optical and electrical properties of Ni(5 nm)-Au(5 nm) and Ni(3.5 nm)-indium tin oxide (ITO) (60 nm) films were studied. It was found that the normalized transmittance of Ni/ITO film could reach 87 % at 470 nm, which was much larger than that of the Ni-Au film. It was also found that the specific contact resistance was 5 × 10-4 Ω cm2 and 1 × 10-3 Ω cm2, respectively, for Ni-Au and Ni/ITO on p-GaN. Furthermore, it was found that the 20 mA output power of light-emitting diode (LED) with Ni-Au p-contact layer was 5.26 mW. In contrast, the output power could reach 6.59 mW for the LED with Ni/ITO p-contact layer.

Original languageEnglish
Pages (from-to)1668-1670
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number12
Publication statusPublished - 2002 Dec

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


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