@article{7ab1170ca6264d4292e768a3e6296292,
title = "Nitride-based light-emitting diodes with Ni/ITO p-type ohmic contacts",
abstract = "The optical and electrical properties of Ni(5 nm)-Au(5 nm) and Ni(3.5 nm)-indium tin oxide (ITO) (60 nm) films were studied. It was found that the normalized transmittance of Ni/ITO film could reach 87 % at 470 nm, which was much larger than that of the Ni-Au film. It was also found that the specific contact resistance was 5 × 10-4 Ω cm2 and 1 × 10-3 Ω cm2, respectively, for Ni-Au and Ni/ITO on p-GaN. Furthermore, it was found that the 20 mA output power of light-emitting diode (LED) with Ni-Au p-contact layer was 5.26 mW. In contrast, the output power could reach 6.59 mW for the LED with Ni/ITO p-contact layer.",
author = "Yu-Cheng Lin and Shoou-Jinn Chang and Su, {Y. K.} and Tsai, {T. Y.} and Chang, {C. S.} and Shei, {S. C.} and Hsu, {S. J.} and Liu, {C. H.} and Liaw, {U. H.} and Chen, {S. C.} and Huang, {B. R.}",
note = "Funding Information: Manuscript received July 23, 2002; revised August 20, 2002. This work was supported by the National Science Council under Contract NSC-89-2215-E-006-095. Y. C. Lin, S. J. Chang, Y. K. Su, T. Y. Tsai, and C. S. Chang are with the Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, R.O.C. S. C. Shei and S. J. Hsu are with the South Epitaxy Corporation, Hsin-Shi 744, Taiwan, R.O.C. C. H. Liu is with the Department of Electronic Engineering, Nan-Jeon Junior College of Technology and Commerce, Yan-Hsui 737, Taiwan, R.O.C. U. H. Liaw is with the Department of Electronic Engineering, Chin-Min College, To-Fen 351, Taiwan, R.O.C. S. C. Chen and B. R. Huang are with the Department of Electronic Engineering, National Yunlin University of Science and Technology, Touliu 640, Taiwan, R.O.C. Digital Object Identifier 10.1109/LPT.2002.804649",
year = "2002",
month = dec,
doi = "10.1109/LPT.2002.804649",
language = "English",
volume = "14",
pages = "1668--1670",
journal = "IEEE Photonics Technology Letters",
issn = "1041-1135",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "12",
}