Nitride-based light-emitting diodes with Ni/ITO p-type ohmic contacts

Yu-Cheng Lin, Shoou-Jinn Chang, Y. K. Su, T. Y. Tsai, C. S. Chang, S. C. Shei, S. J. Hsu, C. H. Liu, U. H. Liaw, S. C. Chen, B. R. Huang

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78 Citations (Scopus)

Abstract

The optical and electrical properties of Ni(5 nm)-Au(5 nm) and Ni(3.5 nm)-indium tin oxide (ITO) (60 nm) films were studied. It was found that the normalized transmittance of Ni/ITO film could reach 87 % at 470 nm, which was much larger than that of the Ni-Au film. It was also found that the specific contact resistance was 5 × 10-4 Ω cm2 and 1 × 10-3 Ω cm2, respectively, for Ni-Au and Ni/ITO on p-GaN. Furthermore, it was found that the 20 mA output power of light-emitting diode (LED) with Ni-Au p-contact layer was 5.26 mW. In contrast, the output power could reach 6.59 mW for the LED with Ni/ITO p-contact layer.

Original languageEnglish
Pages (from-to)1668-1670
Number of pages3
JournalIEEE Photonics Technology Letters
Volume14
Issue number12
DOIs
Publication statusPublished - 2002 Dec

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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