Nitride-based light-emitting diodes with Ni/ITO p-type ohmic contacts

Y. C. Lin; S. J. Chang; Y. K. Su; T. Y. Tsai; C. S. Chang; S. C. Shei; S. J. Hsu; C. H. Liu; U. H. Liaw; S. C. Chen; B. R. Huang

doi:10.1109/LPT.2002.804649

Nitride-based light-emitting diodes with Ni/ITO p-type ohmic contacts

Y. C. Lin
, S. J. Chang
, Y. K. Su
, T. Y. Tsai
, C. S. Chang
, S. C. Shei
, S. J. Hsu
, C. H. Liu
, U. H. Liaw
, S. C. Chen
, B. R. Huang

Research output: Contribution to journal › Article › peer-review

81 Citations (Scopus)

Abstract

The optical and electrical properties of Ni(5 nm)-Au(5 nm) and Ni(3.5 nm)-indium tin oxide (ITO) (60 nm) films were studied. It was found that the normalized transmittance of Ni/ITO film could reach 87 % at 470 nm, which was much larger than that of the Ni-Au film. It was also found that the specific contact resistance was 5 × 10^-4 Ω cm² and 1 × 10^-3 Ω cm², respectively, for Ni-Au and Ni/ITO on p-GaN. Furthermore, it was found that the 20 mA output power of light-emitting diode (LED) with Ni-Au p-contact layer was 5.26 mW. In contrast, the output power could reach 6.59 mW for the LED with Ni/ITO p-contact layer.

Original language	English
Pages (from-to)	1668-1670
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	14
Issue number	12
DOIs	https://doi.org/10.1109/LPT.2002.804649
Publication status	Published - 2002 Dec

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2002.804649

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@article{7ab1170ca6264d4292e768a3e6296292,

title = "Nitride-based light-emitting diodes with Ni/ITO p-type ohmic contacts",

abstract = "The optical and electrical properties of Ni(5 nm)-Au(5 nm) and Ni(3.5 nm)-indium tin oxide (ITO) (60 nm) films were studied. It was found that the normalized transmittance of Ni/ITO film could reach 87 \% at 470 nm, which was much larger than that of the Ni-Au film. It was also found that the specific contact resistance was 5 × 10-4 Ω cm2 and 1 × 10-3 Ω cm2, respectively, for Ni-Au and Ni/ITO on p-GaN. Furthermore, it was found that the 20 mA output power of light-emitting diode (LED) with Ni-Au p-contact layer was 5.26 mW. In contrast, the output power could reach 6.59 mW for the LED with Ni/ITO p-contact layer.",

author = "Lin, \{Y. C.\} and Chang, \{S. J.\} and Su, \{Y. K.\} and Tsai, \{T. Y.\} and Chang, \{C. S.\} and Shei, \{S. C.\} and Hsu, \{S. J.\} and Liu, \{C. H.\} and Liaw, \{U. H.\} and Chen, \{S. C.\} and Huang, \{B. R.\}",

note = "Funding Information: Manuscript received July 23, 2002; revised August 20, 2002. This work was supported by the National Science Council under Contract NSC-89-2215-E-006-095. Y. C. Lin, S. J. Chang, Y. K. Su, T. Y. Tsai, and C. S. Chang are with the Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, R.O.C. S. C. Shei and S. J. Hsu are with the South Epitaxy Corporation, Hsin-Shi 744, Taiwan, R.O.C. C. H. Liu is with the Department of Electronic Engineering, Nan-Jeon Junior College of Technology and Commerce, Yan-Hsui 737, Taiwan, R.O.C. U. H. Liaw is with the Department of Electronic Engineering, Chin-Min College, To-Fen 351, Taiwan, R.O.C. S. C. Chen and B. R. Huang are with the Department of Electronic Engineering, National Yunlin University of Science and Technology, Touliu 640, Taiwan, R.O.C. Digital Object Identifier 10.1109/LPT.2002.804649",

year = "2002",

month = dec,

doi = "10.1109/LPT.2002.804649",

language = "English",

volume = "14",

pages = "1668--1670",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}

TY - JOUR

T1 - Nitride-based light-emitting diodes with Ni/ITO p-type ohmic contacts

AU - Lin, Y. C.

AU - Chang, S. J.

AU - Su, Y. K.

AU - Tsai, T. Y.

AU - Chang, C. S.

AU - Shei, S. C.

AU - Hsu, S. J.

AU - Liu, C. H.

AU - Liaw, U. H.

AU - Chen, S. C.

AU - Huang, B. R.

N1 - Funding Information: Manuscript received July 23, 2002; revised August 20, 2002. This work was supported by the National Science Council under Contract NSC-89-2215-E-006-095. Y. C. Lin, S. J. Chang, Y. K. Su, T. Y. Tsai, and C. S. Chang are with the Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, R.O.C. S. C. Shei and S. J. Hsu are with the South Epitaxy Corporation, Hsin-Shi 744, Taiwan, R.O.C. C. H. Liu is with the Department of Electronic Engineering, Nan-Jeon Junior College of Technology and Commerce, Yan-Hsui 737, Taiwan, R.O.C. U. H. Liaw is with the Department of Electronic Engineering, Chin-Min College, To-Fen 351, Taiwan, R.O.C. S. C. Chen and B. R. Huang are with the Department of Electronic Engineering, National Yunlin University of Science and Technology, Touliu 640, Taiwan, R.O.C. Digital Object Identifier 10.1109/LPT.2002.804649

PY - 2002/12

Y1 - 2002/12

N2 - The optical and electrical properties of Ni(5 nm)-Au(5 nm) and Ni(3.5 nm)-indium tin oxide (ITO) (60 nm) films were studied. It was found that the normalized transmittance of Ni/ITO film could reach 87 % at 470 nm, which was much larger than that of the Ni-Au film. It was also found that the specific contact resistance was 5 × 10-4 Ω cm2 and 1 × 10-3 Ω cm2, respectively, for Ni-Au and Ni/ITO on p-GaN. Furthermore, it was found that the 20 mA output power of light-emitting diode (LED) with Ni-Au p-contact layer was 5.26 mW. In contrast, the output power could reach 6.59 mW for the LED with Ni/ITO p-contact layer.

AB - The optical and electrical properties of Ni(5 nm)-Au(5 nm) and Ni(3.5 nm)-indium tin oxide (ITO) (60 nm) films were studied. It was found that the normalized transmittance of Ni/ITO film could reach 87 % at 470 nm, which was much larger than that of the Ni-Au film. It was also found that the specific contact resistance was 5 × 10-4 Ω cm2 and 1 × 10-3 Ω cm2, respectively, for Ni-Au and Ni/ITO on p-GaN. Furthermore, it was found that the 20 mA output power of light-emitting diode (LED) with Ni-Au p-contact layer was 5.26 mW. In contrast, the output power could reach 6.59 mW for the LED with Ni/ITO p-contact layer.

UR - https://www.scopus.com/pages/publications/0036894222

UR - https://www.scopus.com/pages/publications/0036894222#tab=citedBy

U2 - 10.1109/LPT.2002.804649

DO - 10.1109/LPT.2002.804649

M3 - Article

AN - SCOPUS:0036894222

SN - 1041-1135

VL - 14

SP - 1668

EP - 1670

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 12

ER -

Nitride-based light-emitting diodes with Ni/ITO p-type ohmic contacts

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