Nitride-based light-emitting diodes with p-AIInGaN surface layers

C. H. Kuo; C. C. Lin; S. J. Chang; Y. P. Hsu; J. M. Tsai; W. C. Lai; P. T. Wang

doi:10.1109/TED.2005.856817

Nitride-based light-emitting diodes with p-AIInGaN surface layers

C. H. Kuo, C. C. Lin, S. J. Chang, Y. P. Hsu, J. M. Tsai, W. C. Lai, P. T. Wang

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

We have prepared bulk p-AlInGaN layers and light-emitting diodes (LEDs) with p-AlInGaN surface layers by metal-organic chemical vapor deposition. By properly control the TMAI and TMIn flow rates, we could match the lattice constant of p-AlInGaN to that of GaN. It was found that surface of the LED with p-AlInGaN layer was rough with a high density of hexagonal pits. Although the forward voltage of the LED with p-AlInGaN layer was slightly larger, it was found that we can enhance the output power by 54% by using p-AlInGaN surface layer.

Original language	English
Pages (from-to)	2346-2349
Number of pages	4
Journal	IEEE Transactions on Electron Devices
Volume	52
Issue number	10
DOIs	https://doi.org/10.1109/TED.2005.856817
Publication status	Published - 2005 Oct 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/TED.2005.856817

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title = "Nitride-based light-emitting diodes with p-AIInGaN surface layers",

abstract = "We have prepared bulk p-AlInGaN layers and light-emitting diodes (LEDs) with p-AlInGaN surface layers by metal-organic chemical vapor deposition. By properly control the TMAI and TMIn flow rates, we could match the lattice constant of p-AlInGaN to that of GaN. It was found that surface of the LED with p-AlInGaN layer was rough with a high density of hexagonal pits. Although the forward voltage of the LED with p-AlInGaN layer was slightly larger, it was found that we can enhance the output power by 54% by using p-AlInGaN surface layer.",

author = "Kuo, {C. H.} and Lin, {C. C.} and Chang, {S. J.} and Hsu, {Y. P.} and Tsai, {J. M.} and Lai, {W. C.} and Wang, {P. T.}",

year = "2005",

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doi = "10.1109/TED.2005.856817",

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T1 - Nitride-based light-emitting diodes with p-AIInGaN surface layers

AU - Kuo, C. H.

AU - Lin, C. C.

AU - Chang, S. J.

AU - Hsu, Y. P.

AU - Tsai, J. M.

AU - Lai, W. C.

AU - Wang, P. T.

PY - 2005/10/1

Y1 - 2005/10/1

N2 - We have prepared bulk p-AlInGaN layers and light-emitting diodes (LEDs) with p-AlInGaN surface layers by metal-organic chemical vapor deposition. By properly control the TMAI and TMIn flow rates, we could match the lattice constant of p-AlInGaN to that of GaN. It was found that surface of the LED with p-AlInGaN layer was rough with a high density of hexagonal pits. Although the forward voltage of the LED with p-AlInGaN layer was slightly larger, it was found that we can enhance the output power by 54% by using p-AlInGaN surface layer.

AB - We have prepared bulk p-AlInGaN layers and light-emitting diodes (LEDs) with p-AlInGaN surface layers by metal-organic chemical vapor deposition. By properly control the TMAI and TMIn flow rates, we could match the lattice constant of p-AlInGaN to that of GaN. It was found that surface of the LED with p-AlInGaN layer was rough with a high density of hexagonal pits. Although the forward voltage of the LED with p-AlInGaN layer was slightly larger, it was found that we can enhance the output power by 54% by using p-AlInGaN surface layer.

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