Abstract
We have demonstrated bulk p-AlInGaN layers and light emitting diodes (LEDs) with p-AlInGaN surface layers by metalorganic chemical vapor deposition (MOCVD). It was found that surface of the LED with p-AlInGaN layer was rough with a high density of hexagonal pits. Although the forward voltage of the LED with p-AlInGaN layer was slightly larger, it was found that we can enhance the output power by 54% by using p-AlInGaN surface layer.
Original language | English |
---|---|
Pages (from-to) | 2153-2155 |
Number of pages | 3 |
Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
Volume | 3 |
DOIs | |
Publication status | Published - 2006 |
Event | 6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, Germany Duration: 2005 Aug 28 → 2005 Sept 2 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics