Nitride-based light emitting diodes with quaternary p-AlInGaN surface layers

C. H. Kuo; Shoou-Jinn Chang; G. C. Chi; K. T. Lam; Y. S. Sun

doi:10.1002/pssc.200565177

Nitride-based light emitting diodes with quaternary p-AlInGaN surface layers

C. H. Kuo, Shoou-Jinn Chang, G. C. Chi, K. T. Lam, Y. S. Sun

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

We have demonstrated bulk p-AlInGaN layers and light emitting diodes (LEDs) with p-AlInGaN surface layers by metalorganic chemical vapor deposition (MOCVD). It was found that surface of the LED with p-AlInGaN layer was rough with a high density of hexagonal pits. Although the forward voltage of the LED with p-AlInGaN layer was slightly larger, it was found that we can enhance the output power by 54% by using p-AlInGaN surface layer.

Original language	English
Pages (from-to)	2153-2155
Number of pages	3
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	3
DOIs	https://doi.org/10.1002/pssc.200565177
Publication status	Published - 2006 Jul 31
Event	6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, Germany Duration: 2005 Aug 28 → 2005 Sep 2

All Science Journal Classification (ASJC) codes

Condensed Matter Physics

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title = "Nitride-based light emitting diodes with quaternary p-AlInGaN surface layers",

abstract = "We have demonstrated bulk p-AlInGaN layers and light emitting diodes (LEDs) with p-AlInGaN surface layers by metalorganic chemical vapor deposition (MOCVD). It was found that surface of the LED with p-AlInGaN layer was rough with a high density of hexagonal pits. Although the forward voltage of the LED with p-AlInGaN layer was slightly larger, it was found that we can enhance the output power by 54% by using p-AlInGaN surface layer.",

author = "Kuo, {C. H.} and Shoou-Jinn Chang and Chi, {G. C.} and Lam, {K. T.} and Sun, {Y. S.}",

year = "2006",

month = jul,

day = "31",

doi = "10.1002/pssc.200565177",

language = "English",

volume = "3",

pages = "2153--2155",

journal = "Physica Status Solidi C: Conferences",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

note = "6th International Conference on Nitride Semiconductors, ICNS-6 ; Conference date: 28-08-2005 Through 02-09-2005",

}

TY - JOUR

T1 - Nitride-based light emitting diodes with quaternary p-AlInGaN surface layers

AU - Kuo, C. H.

AU - Chang, Shoou-Jinn

AU - Chi, G. C.

AU - Lam, K. T.

AU - Sun, Y. S.

PY - 2006/7/31

Y1 - 2006/7/31

N2 - We have demonstrated bulk p-AlInGaN layers and light emitting diodes (LEDs) with p-AlInGaN surface layers by metalorganic chemical vapor deposition (MOCVD). It was found that surface of the LED with p-AlInGaN layer was rough with a high density of hexagonal pits. Although the forward voltage of the LED with p-AlInGaN layer was slightly larger, it was found that we can enhance the output power by 54% by using p-AlInGaN surface layer.

AB - We have demonstrated bulk p-AlInGaN layers and light emitting diodes (LEDs) with p-AlInGaN surface layers by metalorganic chemical vapor deposition (MOCVD). It was found that surface of the LED with p-AlInGaN layer was rough with a high density of hexagonal pits. Although the forward voltage of the LED with p-AlInGaN layer was slightly larger, it was found that we can enhance the output power by 54% by using p-AlInGaN surface layer.

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U2 - 10.1002/pssc.200565177

DO - 10.1002/pssc.200565177

M3 - Conference article

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SP - 2153

EP - 2155

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

SN - 1862-6351

T2 - 6th International Conference on Nitride Semiconductors, ICNS-6

Y2 - 28 August 2005 through 2 September 2005

ER -

Nitride-based light emitting diodes with quaternary p-AlInGaN surface layers

Abstract

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