Nitride-based light emitting diodes with quaternary p-AlInGaN surface layers

C. H. Kuo; S. J. Chang; G. C. Chi; K. T. Lam; Y. S. Sun

doi:10.1002/pssc.200565177

Nitride-based light emitting diodes with quaternary p-AlInGaN surface layers

C. H. Kuo, S. J. Chang, G. C. Chi, K. T. Lam, Y. S. Sun

Institute of Microelectronics

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

We have demonstrated bulk p-AlInGaN layers and light emitting diodes (LEDs) with p-AlInGaN surface layers by metalorganic chemical vapor deposition (MOCVD). It was found that surface of the LED with p-AlInGaN layer was rough with a high density of hexagonal pits. Although the forward voltage of the LED with p-AlInGaN layer was slightly larger, it was found that we can enhance the output power by 54% by using p-AlInGaN surface layer.

Original language	English
Pages (from-to)	2153-2155
Number of pages	3
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	3
DOIs	https://doi.org/10.1002/pssc.200565177
Publication status	Published - 2006
Event	6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, Germany Duration: 2005 Aug 28 → 2005 Sept 2

All Science Journal Classification (ASJC) codes

Condensed Matter Physics

Access to Document

10.1002/pssc.200565177

Cite this

@article{9a90c65bd3fd4911b380bff0e22e4aef,

title = "Nitride-based light emitting diodes with quaternary p-AlInGaN surface layers",

abstract = "We have demonstrated bulk p-AlInGaN layers and light emitting diodes (LEDs) with p-AlInGaN surface layers by metalorganic chemical vapor deposition (MOCVD). It was found that surface of the LED with p-AlInGaN layer was rough with a high density of hexagonal pits. Although the forward voltage of the LED with p-AlInGaN layer was slightly larger, it was found that we can enhance the output power by 54% by using p-AlInGaN surface layer.",

author = "Kuo, {C. H.} and Chang, {S. J.} and Chi, {G. C.} and Lam, {K. T.} and Sun, {Y. S.}",

year = "2006",

doi = "10.1002/pssc.200565177",

language = "English",

volume = "3",

pages = "2153--2155",

journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

note = "6th International Conference on Nitride Semiconductors, ICNS-6 ; Conference date: 28-08-2005 Through 02-09-2005",

}

TY - JOUR

T1 - Nitride-based light emitting diodes with quaternary p-AlInGaN surface layers

AU - Kuo, C. H.

AU - Chang, S. J.

AU - Chi, G. C.

AU - Lam, K. T.

AU - Sun, Y. S.

PY - 2006

Y1 - 2006

N2 - We have demonstrated bulk p-AlInGaN layers and light emitting diodes (LEDs) with p-AlInGaN surface layers by metalorganic chemical vapor deposition (MOCVD). It was found that surface of the LED with p-AlInGaN layer was rough with a high density of hexagonal pits. Although the forward voltage of the LED with p-AlInGaN layer was slightly larger, it was found that we can enhance the output power by 54% by using p-AlInGaN surface layer.

AB - We have demonstrated bulk p-AlInGaN layers and light emitting diodes (LEDs) with p-AlInGaN surface layers by metalorganic chemical vapor deposition (MOCVD). It was found that surface of the LED with p-AlInGaN layer was rough with a high density of hexagonal pits. Although the forward voltage of the LED with p-AlInGaN layer was slightly larger, it was found that we can enhance the output power by 54% by using p-AlInGaN surface layer.

UR - http://www.scopus.com/inward/record.url?scp=33746363843&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33746363843&partnerID=8YFLogxK

U2 - 10.1002/pssc.200565177

DO - 10.1002/pssc.200565177

M3 - Conference article

AN - SCOPUS:33746363843

SN - 1862-6351

VL - 3

SP - 2153

EP - 2155

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

T2 - 6th International Conference on Nitride Semiconductors, ICNS-6

Y2 - 28 August 2005 through 2 September 2005

ER -

Nitride-based light emitting diodes with quaternary p-AlInGaN surface layers

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this