Nitride-based light emitting diodes with quaternary p-AlInGaN surface layers

C. H. Kuo, Shoou-Jinn Chang, G. C. Chi, K. T. Lam, Y. S. Sun

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)

Abstract

We have demonstrated bulk p-AlInGaN layers and light emitting diodes (LEDs) with p-AlInGaN surface layers by metalorganic chemical vapor deposition (MOCVD). It was found that surface of the LED with p-AlInGaN layer was rough with a high density of hexagonal pits. Although the forward voltage of the LED with p-AlInGaN layer was slightly larger, it was found that we can enhance the output power by 54% by using p-AlInGaN surface layer.

Original languageEnglish
Pages (from-to)2153-2155
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume3
DOIs
Publication statusPublished - 2006 Jul 31
Event6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, Germany
Duration: 2005 Aug 282005 Sep 2

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

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