Abstract
The electrical properties of Si-doped n+-In0.23Ga0.77N/GaN SPS structure were investigated and compared with conventional Mg-doped GaN contact layer. Temperature depend Hall measurement showed that such a SPS structure exhibits a high sheet electron concentration. It was found that we could reduce the 20 mA LED forward voltage from 3.78 V to 2.94 V and also reduce the series resistance of the LED from 41 Ω to 10 Ω by introducing such an n+-InGaN/GaN SPS top contact. It was also found that we could improve the LED lifetime by such a SPS structure.
Original language | English |
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Pages (from-to) | 535-537 |
Number of pages | 3 |
Journal | IEEE Transactions on Electron Devices |
Volume | 50 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2003 Feb |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering