Nitride-based light emitting diodes with Si-doped In0.23Ga0.77N/GaN short period superlattice tunneling contact layer

C. H. Kuo; S. J. Chang; Y. K. Su; L. W. Wu; J. F. Chen; J. K. Sheu; J. M. Tsai

doi:10.1109/TED.2003.809435

Nitride-based light emitting diodes with Si-doped In_0.23Ga_0.77N/GaN short period superlattice tunneling contact layer

C. H. Kuo, S. J. Chang, Y. K. Su, L. W. Wu, J. F. Chen, J. K. Sheu, J. M. Tsai

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The electrical properties of Si-doped n⁺-In_0.23Ga_0.77N/GaN SPS structure were investigated and compared with conventional Mg-doped GaN contact layer. Temperature depend Hall measurement showed that such a SPS structure exhibits a high sheet electron concentration. It was found that we could reduce the 20 mA LED forward voltage from 3.78 V to 2.94 V and also reduce the series resistance of the LED from 41 Ω to 10 Ω by introducing such an n⁺-InGaN/GaN SPS top contact. It was also found that we could improve the LED lifetime by such a SPS structure.

Original language	English
Pages (from-to)	535-537
Number of pages	3
Journal	IEEE Transactions on Electron Devices
Volume	50
Issue number	2
DOIs	https://doi.org/10.1109/TED.2003.809435
Publication status	Published - 2003 Feb

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2003.809435

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@article{ac7ea408563b40c49d0f552077c0ed9e,

title = "Nitride-based light emitting diodes with Si-doped In0.23Ga0.77N/GaN short period superlattice tunneling contact layer",

abstract = "The electrical properties of Si-doped n+-In0.23Ga0.77N/GaN SPS structure were investigated and compared with conventional Mg-doped GaN contact layer. Temperature depend Hall measurement showed that such a SPS structure exhibits a high sheet electron concentration. It was found that we could reduce the 20 mA LED forward voltage from 3.78 V to 2.94 V and also reduce the series resistance of the LED from 41 Ω to 10 Ω by introducing such an n+-InGaN/GaN SPS top contact. It was also found that we could improve the LED lifetime by such a SPS structure.",

author = "Kuo, {C. H.} and Chang, {S. J.} and Su, {Y. K.} and Wu, {L. W.} and Chen, {J. F.} and Sheu, {J. K.} and Tsai, {J. M.}",

note = "Funding Information: Manuscript received June 18, 2002; revised November 4, 2002. This work was supported by the National Science Council of Taiwan, R.O.C., under Grants NSC 90-2215-E-008-043 and NSC 90-2112-M-008-046. The review of this brief was arranged by Editor S. Datta.",

year = "2003",

month = feb,

doi = "10.1109/TED.2003.809435",

language = "English",

volume = "50",

pages = "535--537",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

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TY - JOUR

T1 - Nitride-based light emitting diodes with Si-doped In0.23Ga0.77N/GaN short period superlattice tunneling contact layer

AU - Kuo, C. H.

AU - Chang, S. J.

AU - Su, Y. K.

AU - Wu, L. W.

AU - Chen, J. F.

AU - Sheu, J. K.

AU - Tsai, J. M.

N1 - Funding Information: Manuscript received June 18, 2002; revised November 4, 2002. This work was supported by the National Science Council of Taiwan, R.O.C., under Grants NSC 90-2215-E-008-043 and NSC 90-2112-M-008-046. The review of this brief was arranged by Editor S. Datta.

PY - 2003/2

Y1 - 2003/2

N2 - The electrical properties of Si-doped n+-In0.23Ga0.77N/GaN SPS structure were investigated and compared with conventional Mg-doped GaN contact layer. Temperature depend Hall measurement showed that such a SPS structure exhibits a high sheet electron concentration. It was found that we could reduce the 20 mA LED forward voltage from 3.78 V to 2.94 V and also reduce the series resistance of the LED from 41 Ω to 10 Ω by introducing such an n+-InGaN/GaN SPS top contact. It was also found that we could improve the LED lifetime by such a SPS structure.

AB - The electrical properties of Si-doped n+-In0.23Ga0.77N/GaN SPS structure were investigated and compared with conventional Mg-doped GaN contact layer. Temperature depend Hall measurement showed that such a SPS structure exhibits a high sheet electron concentration. It was found that we could reduce the 20 mA LED forward voltage from 3.78 V to 2.94 V and also reduce the series resistance of the LED from 41 Ω to 10 Ω by introducing such an n+-InGaN/GaN SPS top contact. It was also found that we could improve the LED lifetime by such a SPS structure.

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U2 - 10.1109/TED.2003.809435

DO - 10.1109/TED.2003.809435

M3 - Article

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SN - 0018-9383

VL - 50

SP - 535

EP - 537

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 2

ER -

Nitride-based light emitting diodes with Si-doped In_0.23Ga_0.77N/GaN short period superlattice tunneling contact layer

Abstract

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