Abstract
Nitride-based light emitting diodes (LEDs) with sidewall texture and pillar waveguides (STPW) were fabricated using conventional lithography method. With 20-mA injection current, it was found that forward voltages were 3.16 and 3.15 V for the conventional LED and the LED with STPW, respectively. It was also found that 20-mA LED output powers were 8.4 and 10.1 mW for conventional LED and the LED with STPW, respectively. The enhancement is attributed to the out-coupling of lateral waveguide mode in the near horizontal directions.
| Original language | English |
|---|---|
| Pages (from-to) | 2517-2519 |
| Number of pages | 3 |
| Journal | IEEE Photonics Technology Letters |
| Volume | 18 |
| Issue number | 23 |
| DOIs | |
| Publication status | Published - 2006 Dec 1 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering