Nitride-based MIS-like diodes with semi-insulating Mg-doped GaN cap layers

Shoou-Jinn Chang, C. L. Yu, P. C. Chang, Yu-Cheng Lin, C. H. Chen

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Nitride-based diodes with an in situ grown, 30 nm thick unactivated Mg-doped GaN cap layer were fabricated. It was found that we could significantly reduce leakage current by using the semi-insulating Mg-doped GaN cap layer. This is due to the thicker and higher potential barrier and the effective passivation of surface states when the semi-insulating Mg-doped GaN cap layer was inserted.

Original languageEnglish
Article number009
Pages (from-to)1422-1424
Number of pages3
JournalSemiconductor Science and Technology
Volume21
Issue number10
DOIs
Publication statusPublished - 2006 Oct 10

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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