Nitride-based MQW LEDs with multiple GaN-SiN nucleation layers

S. C. Wei, Y. K. Su, S. J. Chang, Shi Ming Chen, Wen Liang Li

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)


Nitride-based light emitting diodes (LEDs) separately prepared with a conventional single low-temperature (LT) GaN nucleation layer and multiple GaN-SiN nucleation layers were both prepared. It was found that we could reduce defect density and thus improve crystal quality of the GaN-based LEDs by using multiple GaN-SiN nucleation layers. With a 20-V applied reverse bias, it was found that the reverse leakage currents measured from the LED with a single LT GaN nucleation layer and the one with 10-pair GaN-SiN nucleation layers were 1.5 × 10-4 and 2.5 × 10-6 A, respectively. It was also determined that we could use the multiple GaN-SiN nucleation layers to enhance the output intensity of near ultraviolet (UV) LEDs and to improve the reliability of nitride-based LEDs.

Original languageEnglish
Pages (from-to)1104-1109
Number of pages6
JournalIEEE Transactions on Electron Devices
Issue number6
Publication statusPublished - 2005 Jun

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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