Nitride-based MQW LEDs with multiple GaN-SiN nucleation layers

S. C. Wei; Y. K. Su; S. J. Chang; Shi Ming Chen; Wen Liang Li

doi:10.1109/TED.2005.848085

Nitride-based MQW LEDs with multiple GaN-SiN nucleation layers

S. C. Wei, Y. K. Su, S. J. Chang, Shi Ming Chen, Wen Liang Li

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

Nitride-based light emitting diodes (LEDs) separately prepared with a conventional single low-temperature (LT) GaN nucleation layer and multiple GaN-SiN nucleation layers were both prepared. It was found that we could reduce defect density and thus improve crystal quality of the GaN-based LEDs by using multiple GaN-SiN nucleation layers. With a 20-V applied reverse bias, it was found that the reverse leakage currents measured from the LED with a single LT GaN nucleation layer and the one with 10-pair GaN-SiN nucleation layers were 1.5 × 10^-4 and 2.5 × 10^-6 A, respectively. It was also determined that we could use the multiple GaN-SiN nucleation layers to enhance the output intensity of near ultraviolet (UV) LEDs and to improve the reliability of nitride-based LEDs.

Original language	English
Pages (from-to)	1104-1109
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	52
Issue number	6
DOIs	https://doi.org/10.1109/TED.2005.848085
Publication status	Published - 2005 Jun

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2005.848085

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title = "Nitride-based MQW LEDs with multiple GaN-SiN nucleation layers",

abstract = "Nitride-based light emitting diodes (LEDs) separately prepared with a conventional single low-temperature (LT) GaN nucleation layer and multiple GaN-SiN nucleation layers were both prepared. It was found that we could reduce defect density and thus improve crystal quality of the GaN-based LEDs by using multiple GaN-SiN nucleation layers. With a 20-V applied reverse bias, it was found that the reverse leakage currents measured from the LED with a single LT GaN nucleation layer and the one with 10-pair GaN-SiN nucleation layers were 1.5 × 10-4 and 2.5 × 10-6 A, respectively. It was also determined that we could use the multiple GaN-SiN nucleation layers to enhance the output intensity of near ultraviolet (UV) LEDs and to improve the reliability of nitride-based LEDs.",

author = "Wei, {S. C.} and Su, {Y. K.} and Chang, {S. J.} and Chen, {Shi Ming} and Li, {Wen Liang}",

note = "Funding Information: Manuscript received October 18, 2004; revised February 28, 2005. This work was supported by the National Science Council, Taiwan, R.O.C., under Grants NSC 90-2215-E-008-043 and NSC 90-2112-M-008-046. The review of this paper was arranged by Editor L. Lunardi.",

year = "2005",

month = jun,

doi = "10.1109/TED.2005.848085",

language = "English",

volume = "52",

pages = "1104--1109",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

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TY - JOUR

T1 - Nitride-based MQW LEDs with multiple GaN-SiN nucleation layers

AU - Wei, S. C.

AU - Su, Y. K.

AU - Chang, S. J.

AU - Chen, Shi Ming

AU - Li, Wen Liang

N1 - Funding Information: Manuscript received October 18, 2004; revised February 28, 2005. This work was supported by the National Science Council, Taiwan, R.O.C., under Grants NSC 90-2215-E-008-043 and NSC 90-2112-M-008-046. The review of this paper was arranged by Editor L. Lunardi.

PY - 2005/6

Y1 - 2005/6

N2 - Nitride-based light emitting diodes (LEDs) separately prepared with a conventional single low-temperature (LT) GaN nucleation layer and multiple GaN-SiN nucleation layers were both prepared. It was found that we could reduce defect density and thus improve crystal quality of the GaN-based LEDs by using multiple GaN-SiN nucleation layers. With a 20-V applied reverse bias, it was found that the reverse leakage currents measured from the LED with a single LT GaN nucleation layer and the one with 10-pair GaN-SiN nucleation layers were 1.5 × 10-4 and 2.5 × 10-6 A, respectively. It was also determined that we could use the multiple GaN-SiN nucleation layers to enhance the output intensity of near ultraviolet (UV) LEDs and to improve the reliability of nitride-based LEDs.

AB - Nitride-based light emitting diodes (LEDs) separately prepared with a conventional single low-temperature (LT) GaN nucleation layer and multiple GaN-SiN nucleation layers were both prepared. It was found that we could reduce defect density and thus improve crystal quality of the GaN-based LEDs by using multiple GaN-SiN nucleation layers. With a 20-V applied reverse bias, it was found that the reverse leakage currents measured from the LED with a single LT GaN nucleation layer and the one with 10-pair GaN-SiN nucleation layers were 1.5 × 10-4 and 2.5 × 10-6 A, respectively. It was also determined that we could use the multiple GaN-SiN nucleation layers to enhance the output intensity of near ultraviolet (UV) LEDs and to improve the reliability of nitride-based LEDs.

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

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ER -

Nitride-based MQW LEDs with multiple GaN-SiN nucleation layers

Abstract

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