Nitride-Based MSM photodetectors with a HEMT structure and a low-temperature AlGaN intermediate layer

K. H. Lee; R. W. Chuang; P. C. Chang; S. J. Chang; Y. C. Wang; C. L. Yu; J. C. Lin; S. L. Wu

doi:10.1149/1.2988129

Nitride-Based MSM photodetectors with a HEMT structure and a low-temperature AlGaN intermediate layer

K. H. Lee, R. W. Chuang, P. C. Chang, S. J. Chang, Y. C. Wang, C. L. Yu, J. C. Lin, S. L. Wu

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

UV metal-semiconductor-metal (MSM) photodetectors (PDs) based on the AlGaNGaN high-electron-mobility transistor (HEMT) structure with the low-temperature (LT) AlGaN intermediate layer atop were fabricated. A much lower dark current subsequently obtained was in fact benefited by the insertion of the LT AlGaN intermediate layer. In addition, the foregoing structure also rendered PDs with better gate controllability. For the MSM PD structure grown on the LT AlGaN intermediate layer, the resultant responsivity at 360 nm varied from 0.11 to 0.12 AW when the device was biased from 2 to 5 V while the UV/visible rejection was estimated to be around 10³. With a 5 V applied bias, the corresponding noise equivalent power and normalized detectivity (D*) determined were 2.65× 10^-10 W and 1.74× 10⁹ cm Hz0.5 W^-1, respectively.

Original language	English
Pages (from-to)	H959-H963
Journal	Journal of the Electrochemical Society
Volume	155
Issue number	12
DOIs	https://doi.org/10.1149/1.2988129
Publication status	Published - 2008

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1149/1.2988129

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@article{9525cef703a44f069139be0ee0a9dbdb,

title = "Nitride-Based MSM photodetectors with a HEMT structure and a low-temperature AlGaN intermediate layer",

abstract = "UV metal-semiconductor-metal (MSM) photodetectors (PDs) based on the AlGaNGaN high-electron-mobility transistor (HEMT) structure with the low-temperature (LT) AlGaN intermediate layer atop were fabricated. A much lower dark current subsequently obtained was in fact benefited by the insertion of the LT AlGaN intermediate layer. In addition, the foregoing structure also rendered PDs with better gate controllability. For the MSM PD structure grown on the LT AlGaN intermediate layer, the resultant responsivity at 360 nm varied from 0.11 to 0.12 AW when the device was biased from 2 to 5 V while the UV/visible rejection was estimated to be around 103. With a 5 V applied bias, the corresponding noise equivalent power and normalized detectivity (D*) determined were 2.65× 10-10 W and 1.74× 109 cm Hz0.5 W-1, respectively.",

author = "Lee, {K. H.} and Chuang, {R. W.} and Chang, {P. C.} and Chang, {S. J.} and Wang, {Y. C.} and Yu, {C. L.} and Lin, {J. C.} and Wu, {S. L.}",

year = "2008",

doi = "10.1149/1.2988129",

language = "English",

volume = "155",

pages = "H959--H963",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Electrochemical Society, Inc.",

number = "12",

}

TY - JOUR

T1 - Nitride-Based MSM photodetectors with a HEMT structure and a low-temperature AlGaN intermediate layer

AU - Lee, K. H.

AU - Chuang, R. W.

AU - Chang, P. C.

AU - Chang, S. J.

AU - Wang, Y. C.

AU - Yu, C. L.

AU - Lin, J. C.

AU - Wu, S. L.

PY - 2008

Y1 - 2008

N2 - UV metal-semiconductor-metal (MSM) photodetectors (PDs) based on the AlGaNGaN high-electron-mobility transistor (HEMT) structure with the low-temperature (LT) AlGaN intermediate layer atop were fabricated. A much lower dark current subsequently obtained was in fact benefited by the insertion of the LT AlGaN intermediate layer. In addition, the foregoing structure also rendered PDs with better gate controllability. For the MSM PD structure grown on the LT AlGaN intermediate layer, the resultant responsivity at 360 nm varied from 0.11 to 0.12 AW when the device was biased from 2 to 5 V while the UV/visible rejection was estimated to be around 103. With a 5 V applied bias, the corresponding noise equivalent power and normalized detectivity (D*) determined were 2.65× 10-10 W and 1.74× 109 cm Hz0.5 W-1, respectively.

AB - UV metal-semiconductor-metal (MSM) photodetectors (PDs) based on the AlGaNGaN high-electron-mobility transistor (HEMT) structure with the low-temperature (LT) AlGaN intermediate layer atop were fabricated. A much lower dark current subsequently obtained was in fact benefited by the insertion of the LT AlGaN intermediate layer. In addition, the foregoing structure also rendered PDs with better gate controllability. For the MSM PD structure grown on the LT AlGaN intermediate layer, the resultant responsivity at 360 nm varied from 0.11 to 0.12 AW when the device was biased from 2 to 5 V while the UV/visible rejection was estimated to be around 103. With a 5 V applied bias, the corresponding noise equivalent power and normalized detectivity (D*) determined were 2.65× 10-10 W and 1.74× 109 cm Hz0.5 W-1, respectively.

UR - http://www.scopus.com/inward/record.url?scp=54949149609&partnerID=8YFLogxK

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U2 - 10.1149/1.2988129

DO - 10.1149/1.2988129

M3 - Article

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SN - 0013-4651

VL - 155

SP - H959-H963

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 12

ER -

Nitride-Based MSM photodetectors with a HEMT structure and a low-temperature AlGaN intermediate layer

Abstract

All Science Journal Classification (ASJC) codes

UN SDGs

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