Nitride-based MSM UV photodetectors with photo-chemical annealing Schottky contacts

Y. K. Su; P. C. Chang; C. H. Chen; S. J. Chang; C. L. Yu; C. T. Lee; H. Y. Lee; J. Gong; P. C. Chen; C. H. Wang

doi:10.1016/j.sse.2004.11.017

Nitride-based MSM UV photodetectors with photo-chemical annealing Schottky contacts

Y. K. Su, P. C. Chang, C. H. Chen, S. J. Chang, C. L. Yu, C. T. Lee, H. Y. Lee, J. Gong, P. C. Chen, C. H. Wang

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23 Citations (Scopus)

Abstract

The undoped GaN (u-GaN) and two-dimensional electron gas (2DEG) metal-semiconductor-metal (MSM) photodetectors with semi-transparent Ni/Au Schottky barrier contact electrodes were fabricated. It was found that we could achieve a larger Ni/Au transmittance, higher Schottky barrier heights and larger photocurrent to dark current contrast ratios by photo-chemical annealing of these photodetectors in O₂. It was also found that the maximum quantum efficiencies were 13% and 57% for the photo-chemical annealing u-GaN and 2DEG photodetectors, respectively. Furthermore, it was found that we could achieve a larger responsivity, a lower noise level and a larger detectivity by using the 2DEG structure.

Original language	English
Pages (from-to)	459-463
Number of pages	5
Journal	Solid-State Electronics
Volume	49
Issue number	3
DOIs	https://doi.org/10.1016/j.sse.2004.11.017
Publication status	Published - 2005 Mar

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/j.sse.2004.11.017

Cite this

@article{3c3914f243b8481e8d8205bc82a9af64,

title = "Nitride-based MSM UV photodetectors with photo-chemical annealing Schottky contacts",

abstract = "The undoped GaN (u-GaN) and two-dimensional electron gas (2DEG) metal-semiconductor-metal (MSM) photodetectors with semi-transparent Ni/Au Schottky barrier contact electrodes were fabricated. It was found that we could achieve a larger Ni/Au transmittance, higher Schottky barrier heights and larger photocurrent to dark current contrast ratios by photo-chemical annealing of these photodetectors in O2. It was also found that the maximum quantum efficiencies were 13% and 57% for the photo-chemical annealing u-GaN and 2DEG photodetectors, respectively. Furthermore, it was found that we could achieve a larger responsivity, a lower noise level and a larger detectivity by using the 2DEG structure.",

author = "Su, {Y. K.} and Chang, {P. C.} and Chen, {C. H.} and Chang, {S. J.} and Yu, {C. L.} and Lee, {C. T.} and Lee, {H. Y.} and J. Gong and Chen, {P. C.} and Wang, {C. H.}",

year = "2005",

month = mar,

doi = "10.1016/j.sse.2004.11.017",

language = "English",

volume = "49",

pages = "459--463",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

number = "3",

}

TY - JOUR

T1 - Nitride-based MSM UV photodetectors with photo-chemical annealing Schottky contacts

AU - Su, Y. K.

AU - Chang, P. C.

AU - Chen, C. H.

AU - Chang, S. J.

AU - Yu, C. L.

AU - Lee, C. T.

AU - Lee, H. Y.

AU - Gong, J.

AU - Chen, P. C.

AU - Wang, C. H.

PY - 2005/3

Y1 - 2005/3

N2 - The undoped GaN (u-GaN) and two-dimensional electron gas (2DEG) metal-semiconductor-metal (MSM) photodetectors with semi-transparent Ni/Au Schottky barrier contact electrodes were fabricated. It was found that we could achieve a larger Ni/Au transmittance, higher Schottky barrier heights and larger photocurrent to dark current contrast ratios by photo-chemical annealing of these photodetectors in O2. It was also found that the maximum quantum efficiencies were 13% and 57% for the photo-chemical annealing u-GaN and 2DEG photodetectors, respectively. Furthermore, it was found that we could achieve a larger responsivity, a lower noise level and a larger detectivity by using the 2DEG structure.

AB - The undoped GaN (u-GaN) and two-dimensional electron gas (2DEG) metal-semiconductor-metal (MSM) photodetectors with semi-transparent Ni/Au Schottky barrier contact electrodes were fabricated. It was found that we could achieve a larger Ni/Au transmittance, higher Schottky barrier heights and larger photocurrent to dark current contrast ratios by photo-chemical annealing of these photodetectors in O2. It was also found that the maximum quantum efficiencies were 13% and 57% for the photo-chemical annealing u-GaN and 2DEG photodetectors, respectively. Furthermore, it was found that we could achieve a larger responsivity, a lower noise level and a larger detectivity by using the 2DEG structure.

UR - http://www.scopus.com/inward/record.url?scp=19944426541&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=19944426541&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2004.11.017

DO - 10.1016/j.sse.2004.11.017

M3 - Article

AN - SCOPUS:19944426541

SN - 0038-1101

VL - 49

SP - 459

EP - 463

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 3

ER -

Nitride-based MSM UV photodetectors with photo-chemical annealing Schottky contacts

Abstract

All Science Journal Classification (ASJC) codes

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