Nitride-based near-ultraviolet LEDs with an ITO transparent contact

C. H. Kuo, S. J. Chang, Y. K. Su, R. W. Chuang, C. S. Chang, L. W. Wu, W. C. Lai, J. F. Chen, J. K. Sheu, H. M. Lo, J. M. Tsai

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Abstract

Indium tin oxide (ITO) (2300nm) and Ni (5nm)/Au (10nm) films were deposited onto glass substrates, p-GaN layers, n+-InGaN/GaN short-period-superlattice (SPS) structures and near-ultraviolet (near-UV) In0.05Ga0.95N/Al0.1Ga0.9N light emitting diodes (LEDs). It was found that ITO on n+-SPS structure could provide us an extremely high transparency (i.e. 86.5% at 400nm) and a reasonably small 1.2×10-3Ωcm2 specific contact resistance. It was also found that, at 20mA, the forward voltage of the near-UV LED with ITO on n+-SPS upper contact was 3.13V, which is exactly the same as that of the near-UV LED with Ni/Au on n+-SPS upper contact. Furthermore, it was found that we could achieve a 36% larger output power by using such an ITO on n+-SPS upper contact.

Original languageEnglish
Pages (from-to)69-72
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume106
Issue number1
DOIs
Publication statusPublished - 2004 Jan 15

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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