Nitride-based near-ultraviolet multiple-quantum well light-emitting diodes with AlGaN barrier layers

C. H. Kuo; S. J. Chang; Y. K. Su; L. W. Wu; J. K. Sheu; T. C. Wen; W. C. Lai; J. M. Tsai; S. C. Chen

doi:10.1007/s11664-003-0169-0

Nitride-based near-ultraviolet multiple-quantum well light-emitting diodes with AlGaN barrier layers

C. H. Kuo, S. J. Chang, Y. K. Su, L. W. Wu, J. K. Sheu, T. C. Wen, W. C. Lai, J. M. Tsai, S. C. Chen

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The In_0.05Ga_0.95N/GaN, In_0.05Ga_0.95N/Al_0.01Ga_0.9N, and In_0.05Ga_0.95N/Al_0.18Ga_0.82N multiple-quantum well (MQW) light-emitting diodes (LEDs) were prepared by metal-organic chemical-vapor deposition. (MOCVD). It was found that the 20-mA electroluminescence (EL) intensity of the InGaN/Al_0.1Ga_0.9N MQW LED was two times larger than that of the InGaN/GaN MQW LED. The larger maximum-output intensity and the fact that maximum-output intensity occurred at a larger injection current suggest that Al_0.1Ga_0.9N-barrier layers can provide a better carrier confinement and effectively reduce leakage current. In contrast, the EL intensity of the InGaN/Al_0.18Ga_0.82N MQW LED was smaller because of the relaxation that occurred in the MQW active region of the sample.

Original language	English
Pages (from-to)	415-418
Number of pages	4
Journal	Journal of Electronic Materials
Volume	32
Issue number	5
DOIs	https://doi.org/10.1007/s11664-003-0169-0
Publication status	Published - 2003 May

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/s11664-003-0169-0

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@article{a02a9b2cde17473c9157a2d501c24f70,

title = "Nitride-based near-ultraviolet multiple-quantum well light-emitting diodes with AlGaN barrier layers",

abstract = "The In0.05Ga0.95N/GaN, In0.05Ga0.95N/Al0.01Ga0.9N, and In0.05Ga0.95N/Al0.18Ga0.82N multiple-quantum well (MQW) light-emitting diodes (LEDs) were prepared by metal-organic chemical-vapor deposition. (MOCVD). It was found that the 20-mA electroluminescence (EL) intensity of the InGaN/Al0.1Ga0.9N MQW LED was two times larger than that of the InGaN/GaN MQW LED. The larger maximum-output intensity and the fact that maximum-output intensity occurred at a larger injection current suggest that Al0.1Ga0.9N-barrier layers can provide a better carrier confinement and effectively reduce leakage current. In contrast, the EL intensity of the InGaN/Al0.18Ga0.82N MQW LED was smaller because of the relaxation that occurred in the MQW active region of the sample.",

author = "Kuo, {C. H.} and Chang, {S. J.} and Su, {Y. K.} and Wu, {L. W.} and Sheu, {J. K.} and Wen, {T. C.} and Lai, {W. C.} and Tsai, {J. M.} and Chen, {S. C.}",

note = "Funding Information: The authors acknowledge the financial support from the National Science Council for their Research Grant Nos. NSC 90-2215-E-008-043 and NSC 90-2112-M-008-046. Copyright: Copyright 2018 Elsevier B.V., All rights reserved.",

year = "2003",

month = may,

doi = "10.1007/s11664-003-0169-0",

language = "English",

volume = "32",

pages = "415--418",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "5",

}

TY - JOUR

T1 - Nitride-based near-ultraviolet multiple-quantum well light-emitting diodes with AlGaN barrier layers

AU - Kuo, C. H.

AU - Chang, S. J.

AU - Su, Y. K.

AU - Wu, L. W.

AU - Sheu, J. K.

AU - Wen, T. C.

AU - Lai, W. C.

AU - Tsai, J. M.

AU - Chen, S. C.

N1 - Funding Information: The authors acknowledge the financial support from the National Science Council for their Research Grant Nos. NSC 90-2215-E-008-043 and NSC 90-2112-M-008-046. Copyright: Copyright 2018 Elsevier B.V., All rights reserved.

PY - 2003/5

Y1 - 2003/5

N2 - The In0.05Ga0.95N/GaN, In0.05Ga0.95N/Al0.01Ga0.9N, and In0.05Ga0.95N/Al0.18Ga0.82N multiple-quantum well (MQW) light-emitting diodes (LEDs) were prepared by metal-organic chemical-vapor deposition. (MOCVD). It was found that the 20-mA electroluminescence (EL) intensity of the InGaN/Al0.1Ga0.9N MQW LED was two times larger than that of the InGaN/GaN MQW LED. The larger maximum-output intensity and the fact that maximum-output intensity occurred at a larger injection current suggest that Al0.1Ga0.9N-barrier layers can provide a better carrier confinement and effectively reduce leakage current. In contrast, the EL intensity of the InGaN/Al0.18Ga0.82N MQW LED was smaller because of the relaxation that occurred in the MQW active region of the sample.

AB - The In0.05Ga0.95N/GaN, In0.05Ga0.95N/Al0.01Ga0.9N, and In0.05Ga0.95N/Al0.18Ga0.82N multiple-quantum well (MQW) light-emitting diodes (LEDs) were prepared by metal-organic chemical-vapor deposition. (MOCVD). It was found that the 20-mA electroluminescence (EL) intensity of the InGaN/Al0.1Ga0.9N MQW LED was two times larger than that of the InGaN/GaN MQW LED. The larger maximum-output intensity and the fact that maximum-output intensity occurred at a larger injection current suggest that Al0.1Ga0.9N-barrier layers can provide a better carrier confinement and effectively reduce leakage current. In contrast, the EL intensity of the InGaN/Al0.18Ga0.82N MQW LED was smaller because of the relaxation that occurred in the MQW active region of the sample.

UR - http://www.scopus.com/inward/record.url?scp=0038664225&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0038664225&partnerID=8YFLogxK

U2 - 10.1007/s11664-003-0169-0

DO - 10.1007/s11664-003-0169-0

M3 - Article

AN - SCOPUS:0038664225

SN - 0361-5235

VL - 32

SP - 415

EP - 418

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 5

ER -

Nitride-based near-ultraviolet multiple-quantum well light-emitting diodes with AlGaN barrier layers

Abstract

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