Nitride-based photodetectors with unactivated Mg-doped GaN cap layer

K. T. Lam, P. C. Chang, S. J. Chang, C. L. Yu, Y. C. Lin, Y. X. Sun, C. H. Chen

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)

Abstract

Nitride-based MIS-like photodetectors with in situ grown 30 nm thick unactivated semi-insulating Mg-doped GaN cap layers were fabricated. It was found that the reverse leakage current of aforementioned photodetector was comparably much smaller than that of conventional photodetector without the semi-insulating layer, due to the facts that inserting a semi-insulating layer would result in a thicker and higher potential barrier. We could also improve the ultraviolet to visible rejection ratio by inserting a semi-insulating Mg-doped GaN cap layer. To sum up, we have determined that the benefits of incorporating a semi-insulating Mg-doped GaN cap layer into the photodetector would encompass larger effective Schottky barrier height, and larger ultraviolet to visible rejection ratio.

Original languageEnglish
Pages (from-to)191-195
Number of pages5
JournalSensors and Actuators, A: Physical
Volume143
Issue number2
DOIs
Publication statusPublished - 2008 May 16

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering

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